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BUL642D2

Onsemi

BUL642D2 by Onsemi

BUL642D2 by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a flange mount package style. Suitable for use in various electronic devices due to its high collector current and operating temperature of up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,353 parts In-Stock

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2,353

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Vyrian

USA . 2,187 parts In-Stock

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2,187

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 773 parts In-Stock

1+ parts

$0.720

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773

$0.720

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Northwest PG Solutions

USA . 715 parts In-Stock

1+ parts

$0.792

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715

$0.792

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SupplyDigital Components

Austria . 5,495 parts In-Stock

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5,495

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TANS Electronics

Latvia . 4,455 parts In-Stock

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4,455

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Problanco Electronics

Mexico . 3,398 parts In-Stock

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3,398

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Kulean Microsystems

USA . 3,377 parts In-Stock

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3,377

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Corphita

USA . 635 parts In-Stock

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635

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Experience the power of innovation with the BUL642D2 by Onsemi, a top-quality Power Bipolar Junction Transistor designed to meet all your electronic needs. With its NPN configuration and built-in diode, this transistor offers unmatched performance and reliability. Whether you're working on industrial, automotive, or consumer electronics, this product delivers exceptional value and efficiency. Trust in Onsemi's superior manufacturing expertise and elevate your projects with the BUL642D2 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplifiers, switches, and general purpose applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient for circuits requiring a diode function along with transistor functionality.

Package Shape: RECTANGULAR

Allows for easy mounting and placement in circuit boards.

Maximum Power Dissipation (Abs): 75 W

Capable of handling high power levels without overheating.

Maximum Collector-Emitter Voltage: 440 V

Can handle high voltage applications with a wide margin of safety.

Minimum DC Current Gain (hFE): 18

Provides reliable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Collector Current (IC): 3 A

Suitable for applications requiring high current handling capability.

Terminal Finish: TIN LEAD

Ensures good electrical connections and solderability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL642D2 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

440 V

Minimum DC Current Gain (hFE):

18

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL642D2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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