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BUL654

STMicroelectronics

BUL654 by STMicroelectronics

BUL654 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 80W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for high-performance electronic circuits.

Median Price

$1.580

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,233 parts In-Stock

1+ parts

$1.430

100+ parts

$1.160

1k+ parts

$0.944

10k+ parts

$0.754

1,233

$1.430

$1.160

$0.944

$0.754

DigiKey

USA . 27 parts In-Stock

1+ parts

$1.730

100+ parts

-

1k+ parts

-

10k+ parts

-

27

$1.730

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,826 parts In-Stock

1+ parts

$1.358

100+ parts

-

1k+ parts

-

10k+ parts

-

3,826

$1.358

-

-

-

Vyrian

USA . 3,431 parts In-Stock

1+ parts

$1.430

100+ parts

-

1k+ parts

-

10k+ parts

-

3,431

$1.430

-

-

-

Anansix

USA . 2,508 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,508

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,121 parts In-Stock

1+ parts

$1.063

100+ parts

-

1k+ parts

$0.956

10k+ parts

-

2,121

$1.063

-

$0.956

-

Corphita

USA . 2,076 parts In-Stock

1+ parts

$1.287

100+ parts

-

1k+ parts

-

10k+ parts

-

2,076

$1.287

-

-

-

MKK Technologies

India . 989 parts In-Stock

1+ parts

$1.998

100+ parts

-

1k+ parts

-

10k+ parts

-

989

$1.998

-

-

-

DigiPath Technology Company

USA . 989 parts In-Stock

1+ parts

$1.998

100+ parts

-

1k+ parts

-

10k+ parts

-

989

$1.998

-

-

-

Native Components

USA . 20 parts In-Stock

1+ parts

$12.560

100+ parts

-

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-

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20

$12.560

-

-

-

Northwest PG Solutions

USA . 1,921 parts In-Stock

1+ parts

$13.816

100+ parts

$12.434

1k+ parts

-

10k+ parts

-

1,921

$13.816

$12.434

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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56,986

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 29,791 parts In-Stock

1+ parts

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100+ parts

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29,791

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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100+ parts

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10,000

-

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Microchip USA

USA . 5,286 parts In-Stock

1+ parts

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5,286

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Alle Elektronik GmbH

Germany . 2,593 parts In-Stock

1+ parts

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2,593

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Perfect Parts

USA . 2,576 parts In-Stock

1+ parts

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100+ parts

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2,576

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-

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-

Parana Technologies

USA . 730 parts In-Stock

1+ parts

-

100+ parts

$1.270

1k+ parts

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10k+ parts

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730

-

$1.270

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-

Kepictronics

USA . 81 parts In-Stock

1+ parts

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100+ parts

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81

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Overview

Unlock the potential of your electronic designs with the BUL654 from STMicroelectronics, a trusted leader in innovation. This robust NPN power transistor excels in switching applications, delivering outstanding performance with high power dissipation and impressive thermal stability. Its reliable construction ensures long-lasting durability, making it perfect for everything from industrial systems to consumer electronics. Experience efficiency and quality that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides excellent protection against environmental factors, ensuring reliability and durability in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, this component is versatile and widely used in amplifying and switching applications, making it suitable for a range of electronic circuits.

Configuration: SINGLE

The single configuration allows for straightforward integration into designs, making it easier to handle and use in circuits.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT enables fast and efficient operation, making it ideal for applications such as power control and signal processing.

Package Shape: RECTANGULAR

The rectangular package shape contributes to compact PCB designs, saving space while maintaining performance.

Terminal Form: THROUGH-HOLE

Through-hole terminal form ensures stable and robust mechanical connections, ideal for high-power applications.

No. of Terminals: 3

Three terminals provide versatility in circuit design, allowing for easier configuration and connectivity.

Maximum Power Dissipation (Abs): 80 W

With an 80 W maximum power dissipation, this BJT can handle significant power loads, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides additional mechanical stability and ease of heat dissipation, which is essential for high-power devices.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 enhances its effectiveness in amplification applications, allowing for more efficient signal processing.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows this transistor to function effectively in high-temperature environments, ensuring reliability in extreme conditions.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage rating of 400 V, this transistor is ideal for high-voltage applications, ensuring performance and safety.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical properties and thermal stability, enhancing overall performance.

Maximum Collector Current (IC): 12 A

A maximum collector current of 12 A allows this BJT to handle substantial loads, making it a solid choice for power management and control.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: SINGLE

Single terminal position simplifies the integration process into electronic designs, making it easier to implement in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL654 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL654 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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