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BD159G

Onsemi

BD159G by Onsemi

The Onsemi BD159G is a NPN BJT transistor with 3 terminals and a max power dissipation of 20W. It has a min DC current gain of 30, operates at up to 150 °C, and can handle a collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration and flange mount package style.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 1,500 parts In-Stock

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$0.291

1,500

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$0.291

Rochester

USA . 500 parts In-Stock

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$0.229

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$0.190

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$0.169

500

-

$0.229

$0.190

$0.169

Distributors (In-Stock)

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Digiode

USA . 1,791 parts In-Stock

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$0.260

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Chip Stock

USA . 79,000 parts In-Stock

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Vyrian

USA . 5,189 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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ComSIT USA

USA . 627 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 117 parts In-Stock

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ComSIT Distribution GmbH

Germany . 45 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,763 parts In-Stock

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$0.247

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$0.247

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Corohmni

South Africa . 227 parts In-Stock

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$0.274

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AZTECH Wire

Italy . 379 parts In-Stock

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$11.730

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Native Components

USA . 178 parts In-Stock

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$64.950

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$62.352

178

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$62.352

Northwest PG Solutions

USA . 1,305 parts In-Stock

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$71.445

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$71.445

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Component Stockers USA

USA . 277 parts In-Stock

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$99.990

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Perfect Parts

USA . 7,459 parts In-Stock

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Kepictronics

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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SupplyDigital Components

Austria . 3,428 parts In-Stock

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Problanco Electronics

Mexico . 1,823 parts In-Stock

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TANS Electronics

Latvia . 1,177 parts In-Stock

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Authorized Procurement Solutions

USA . 400 parts In-Stock

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UHIMA Technologies

Türkiye . 365 parts In-Stock

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Kulean Microsystems

USA . 74 parts In-Stock

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Overview

Discover the power and reliability of the BD159G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for high-performance amplifier applications. With its durable plastic/epoxy package and NPN configuration, this transistor offers superior amplification capabilities with a maximum power dissipation of 20W and a maximum collector-emitter voltage of 350V. Trust in Onsemi's reputation for excellence and choose the BD159G for your next project to experience enhanced performance and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into most electronic circuits and compatibility with other components.

Configuration: SINGLE

Simplified circuit design and easy installation due to the single configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in audio or signal amplification.

Package Shape: RECTANGULAR

Compact and space-saving design for easier placement on circuit boards.

Terminal Form: THROUGH-HOLE

Allows for easy manual soldering or installation onto a circuit board by passing through pre-drilled holes.

No. of Terminals: 3

Simplified connection process with only 3 terminals to be connected.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting onto a surface for stability and heat dissipation.

Minimum DC Current Gain (hFE): 30

Ensures consistent amplification of input signals with a minimum current gain of 30.

Maximum Operating Temperature: 150 °C

Withstands high temperatures during operation, suitable for a wide range of electronic applications.

Maximum Collector-Emitter Voltage: 350 V

Can handle high voltage differences between collector and emitter, suitable for a variety of circuit designs.

Transistor Element Material: SILICON

Silicon provides excellent electrical properties and high reliability for the transistor.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels up to 0.5 A for various applications.

Terminal Finish: MATTE TIN

Matte tin finish ensures reliable electrical connections and prevents corrosion on terminals.

Terminal Position: SINGLE

Simplified connection process with a single terminal position, making installation easier.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD159G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD159G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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