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BD159STU

Onsemi

BD159STU by Onsemi

BD159STU by Onsemi is a NPN BJT transistor with 350V VCE, 0.5A IC, and 20W power dissipation. Ideal for switching applications in electronics due to its single configuration and hFE of 30. The package style is flange mount with through-hole terminals, making it suitable for various power control circuits.

Median Price

$0.730

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 228,006 parts In-Stock

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$0.730

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Flip Electronics (Authorized)

USA . 228,006 parts In-Stock

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Vyrian

USA . 1,255 parts In-Stock

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$0.880

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Flip Electronics

USA . 228,006 parts In-Stock

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DigiKey Marketplace

USA . 228,006 parts In-Stock

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Chip Stock

USA . 59,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 4,949 parts In-Stock

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ComSIT USA

USA . 4,949 parts In-Stock

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HZD GmbH

Germany . 1,543 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 840 parts In-Stock

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Digiode

USA . 499 parts In-Stock

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Corohmni

South Africa . 63 parts In-Stock

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$0.880

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Native Components

USA . 331 parts In-Stock

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$67.175

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$64.488

331

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Northwest PG Solutions

USA . 1,620 parts In-Stock

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$73.893

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Perfect Parts

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

Israel . 10,862 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,990 parts In-Stock

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SupplyDigital Components

Austria . 8,334 parts In-Stock

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TANS Electronics

Latvia . 6,394 parts In-Stock

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Formix International (Excess)

India . 5,972 parts In-Stock

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Microchip USA

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A-Z Elektronik GmbH

Germany . 4,995 parts In-Stock

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Metaverse IC Inc.

Canada . 4,500 parts In-Stock

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Problanco Electronics

Mexico . 3,344 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,330 parts In-Stock

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Supply Digital

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Kulean Microsystems

USA . 2,731 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 98 parts In-Stock

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Overview

The BD159STU by Onsemi is a top-of-the-line power bipolar junction transistor that offers unmatched quality and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for switching applications in various electronic devices. With a maximum power dissipation of 20W and a maximum collector-emitter voltage of 350V, this transistor delivers outstanding performance and efficiency. Whether you're a hobbyist or a professional, the BD159STU provides exceptional value and benefits that will elevate your projects to the next level. Trust Onsemi for all your transistor needs and experience the difference in quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile and suitable for a variety of electronic projects.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to implement into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in high-speed switching circuits.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power levels, making it suitable for applications where power dissipation is a concern.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and installation in compatible flange mount setups, providing convenience and flexibility in usage.

Maximum Collector-Emitter Voltage: 350 V

With a high voltage handling capability, this transistor can be used in circuits that require higher voltage operation.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, allowing for use in a wide range of electronic applications without risk of overheating.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD159STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

50 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BD159STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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