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BD158

Onsemi

BD158 by Onsemi

The Onsemi BD158 is a NPN BJT transistor with max. collector-emitter voltage of 300V, ideal for amplifier applications. Featuring min. DC current gain of 30 and max. collector current of 0.5A, it operates at up to 150 °C temperature range in a through-hole package style.

Median Price

$41.860

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Master Electronics

USA . 2 parts In-Stock

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$41.860

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Forefront Electronics and Design

USA . 6 parts In-Stock

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$6.130

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Digiode

USA . 5,599 parts In-Stock

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$39.767

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Vyrian

USA . 4,687 parts In-Stock

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Anansix

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Electronic Expediters

USA . 900 parts In-Stock

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900

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ACDS - Activité Composants Distribution Service

France . 734 parts In-Stock

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LittleDiode

UK . 39 parts In-Stock

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GES GmbH

Germany . 16 parts In-Stock

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ECAB

Sweden . 13 parts In-Stock

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Lakeview Electronics

USA . 5 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.458

100+ parts

$0.417

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$0.376

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40

$0.458

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IDEA Electronic Components Group

UK . 470 parts In-Stock

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$1.398

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$1.259

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MKK Technologies

India . 1,281 parts In-Stock

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$2.630

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DigiPath Technology Company

USA . 1,281 parts In-Stock

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$2.630

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Corohmni

South Africa . 151 parts In-Stock

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Native Components

USA . 1,735 parts In-Stock

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$24.005

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Northwest PG Solutions

USA . 976 parts In-Stock

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$28.787

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$25.908

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Corphita

USA . 7,123 parts In-Stock

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$37.674

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Kepictronics

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TANS Electronics

Latvia . 7,960 parts In-Stock

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Problanco Electronics

Mexico . 6,880 parts In-Stock

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Kulean Microsystems

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 1,772 parts In-Stock

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Parana Technologies

USA . 1,453 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Overview

Unlock the power of innovation with the BD158 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the BD158, perfect for amplifier applications. With a maximum collector-emitter voltage of 300V and a minimum DC current gain of 30, this NPN transistor offers exceptional performance and reliability. Its flange mount package design ensures easy installation, while its high operating temperature of 150 °C guarantees durability. Trust Onsemi's expertise and invest in the BD158 for unmatched value and efficiency in your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and makes it easier to implement in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in audio and signal processing circuits.

Package Shape: RECTANGULAR

Allows for easy placement and soldering on PCBs, facilitating the manufacturing process.

Terminal Form: THROUGH-HOLE

Enables easy and secure mounting on the circuit board, ensuring stable connections.

No. of Terminals: 3

Simplifies the circuit layout and reduces the chances of wiring errors.

Package Style (Meter): FLANGE MOUNT

Facilitates secure mounting and heat dissipation, enhancing the overall reliability of the transistor.

Minimum DC Current Gain (hFE): 30

Ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 300 V

Allows for use in high voltage circuits without risk of breakdown, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon transistors offer good thermal stability and high reliability, ensuring long-term performance.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for low-power amplifier circuits and signal processing applications.

Terminal Finish: TIN LEAD

Provides good solderability and ensures a secure electrical connection for stable operation.

Terminal Position: SINGLE

Facilitates easy installation and connection in the circuit, reducing the chances of wiring errors.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD158 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD158 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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