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BD157

Onsemi

BD157 by Onsemi

The Onsemi BD157 is a NPN BJT transistor with max. collector-emitter voltage of 250V and max. collector current of 0.5A. It has a min DC current gain of 30, making it suitable for amplifier applications in various electronic circuits due to its single configuration and through-hole terminal form. Operating up to 150 °C, it features a plastic/epoxy package body material with flange mount style for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Anansix

USA . 2,852 parts In-Stock

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Digiode

USA . 1,900 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 739 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 499 parts In-Stock

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499

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Fibra_Brandt Electronic GMBH

Germany . 380 parts In-Stock

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380

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ECAB

Sweden . 113 parts In-Stock

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LittleDiode

UK . 85 parts In-Stock

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Vyrian

USA . 77 parts In-Stock

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Huijzer Components

Netherlands . 50 parts In-Stock

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GES GmbH

Germany . 10 parts In-Stock

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IDEA Electronic Components Group

UK . 123 parts In-Stock

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$1.354

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$1.219

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MKK Technologies

India . 1,676 parts In-Stock

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$2.547

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DigiPath Technology Company

USA . 1,676 parts In-Stock

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Kulean Microsystems

USA . 3,676 parts In-Stock

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Problanco Electronics

Mexico . 3,229 parts In-Stock

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Corphita

USA . 2,782 parts In-Stock

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Northwest PG Solutions

USA . 2,064 parts In-Stock

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Parana Technologies

USA . 2,011 parts In-Stock

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$1.619

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Native Components

USA . 1,763 parts In-Stock

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SupplyDigital Components

Austria . 965 parts In-Stock

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TANS Electronics

Latvia . 921 parts In-Stock

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UHIMA Technologies

Türkiye . 753 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Supply Digital

USA . 288 parts In-Stock

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Assy Fe

Spain . 45 parts In-Stock

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Overview

Experience the power of the BD157 by Onsemi, a high-quality Power Bipolar Junction Transistor (BJT) designed for amplifier applications. With its NPN configuration, this transistor offers reliable performance and durability. The BD157's flange mount package style ensures easy installation, while its maximum collector-emitter voltage of 250V provides efficient power handling. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and upgrade your electronic devices with the BD157 for enhanced performance and reliability. Elevate your projects with the BD157 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor suitable for amplifier circuits.

Configuration: SINGLE

Simplifies circuit design by requiring only a single transistor in the circuit.

Transistor Application: AMPLIFIER

Specifically designed for use in amplifier circuits, ensuring optimal performance in amplification applications.

Package Shape: RECTANGULAR

Compact and space-efficient design for easier integration into electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure placement on circuit boards.

No. of Terminals: 3

Simplified connection with minimal terminals, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Facilitates mounting of the transistor in various applications, providing flexibility in design.

Minimum DC Current Gain (hFE): 30

Ensures reliable amplification of input signals with a minimum gain specified.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 250 V

Supports high voltage applications, providing versatility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and stability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

Capable of handling current up to 0.5 A, suitable for low to medium power applications.

Terminal Finish: TIN LEAD

Allows for reliable electrical connections and soldering, ensuring secure attachment to circuit boards.

Terminal Position: SINGLE

Simplifies the installation and connection process, reducing chances of error in circuit assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD157 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD157 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-781-4891, 5961997814891

NIIN

997814891

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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