Loading...

BD159

Onsemi

BD159 by Onsemi

The Onsemi BD159 is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 20W, hFE of 30, and VCE of 350V. The package style is flange mount with through-hole terminals in plastic/epoxy material.

Median Price

-

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 79,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

79,000

-

-

-

-

Digiode

USA . 3,621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,621

-

-

-

-

ECAB

Sweden . 2,347 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,347

-

-

-

-

Anansix

USA . 1,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,081

-

-

-

-

LIBRA Elektronik GmbH

Germany . 705 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

705

-

-

-

-

LittleDiode

UK . 156 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

156

-

-

-

-

Fibra_Brandt Electronic GMBH

Germany . 147 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

147

-

-

-

-

Vyrian

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Halfin

Belgium . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

GES GmbH

Germany . 6 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,127 parts In-Stock

1+ parts

$0.859

100+ parts

-

1k+ parts

$0.773

10k+ parts

-

2,127

$0.859

-

$0.773

-

MKK Technologies

India . 1,184 parts In-Stock

1+ parts

$1.616

100+ parts

-

1k+ parts

-

10k+ parts

-

1,184

$1.616

-

-

-

DigiPath Technology Company

USA . 1,184 parts In-Stock

1+ parts

$1.616

100+ parts

-

1k+ parts

-

10k+ parts

-

1,184

$1.616

-

-

-

Native Components

USA . 1,104 parts In-Stock

1+ parts

$29.180

100+ parts

-

1k+ parts

-

10k+ parts

-

1,104

$29.180

-

-

-

Northwest PG Solutions

USA . 5,288 parts In-Stock

1+ parts

$32.098

100+ parts

$28.888

1k+ parts

-

10k+ parts

-

5,288

$32.098

$28.888

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 6,989 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,989

-

-

-

-

Kulean Microsystems

USA . 5,964 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,964

-

-

-

-

Problanco Electronics

Mexico . 5,586 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,586

-

-

-

-

SupplyDigital Components

Austria . 3,980 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,980

-

-

-

-

Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,700

-

-

-

-

Corphita

USA . 3,509 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,509

-

-

-

-

Supply Digital

USA . 1,677 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,677

-

-

-

-

UHIMA Technologies

Türkiye . 601 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

601

-

-

-

-

TANS Electronics

Latvia . 584 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

584

-

-

-

-

Parana Technologies

USA . 455 parts In-Stock

1+ parts

-

100+ parts

$1.027

1k+ parts

-

10k+ parts

-

455

-

$1.027

-

-

Corohmni

South Africa . 333 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

333

-

-

-

-

Assy Fe

Spain . 234 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

234

-

-

-

-

Overview

The Onsemi BD159 Power Bipolar Junction Transistor is a game-changer in the world of amplifiers, offering unrivaled quality and reliability. Manufactured by industry leader Onsemi with a focus on excellence, this NPN transistor is perfect for applications requiring high power dissipation and a maximum collector-emitter voltage of 350V. Whether you're working on audio amplifiers or power supplies, the BD159 delivers exceptional performance and efficiency, making it the ideal choice for your next project. Experience the difference with the Onsemi BD159 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance of durability and cost-effectiveness, making the product reliable and affordable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate this transistor into a variety of electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in audio and signal processing circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting on PCBs, saving space and facilitating efficient circuit layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, making it suitable for applications where durability is important.

No. of Terminals: 3

Having 3 terminals simplifies the connection process and reduces the risk of errors during assembly.

Maximum Power Dissipation (Abs): 20 W

With a high power dissipation capability, this transistor can handle large amounts of power without overheating, ensuring reliability in high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure mounting option, ideal for applications where stability and heat dissipation are important.

Minimum DC Current Gain (hFE): 30

A minimum DC current gain of 30 ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating allows this transistor to be used in a wide range of voltage applications, increasing its versatility.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-term stability in electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads, making it suitable for a variety of low to medium power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability, making it easy to solder this transistor onto PCBs during assembly.

Terminal Position: SINGLE

Having a single terminal position simplifies the installation process and ensures correct alignment during assembly.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, this transistor can withstand the solder reflow process during assembly, ensuring a reliable connection between the transistor and the PCB.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD159 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD159 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-138-1741, 5961011381741

NIIN

011381741

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20