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BD680AG

Onsemi

BD680AG by Onsemi

The Onsemi BD680AG is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 750. With a max power dissipation of 40W and operating temperature up to 150°C, it is suitable for various high-power electronic designs.

Median Price

$1.155

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 500 parts In-Stock

1+ parts

$2.030

100+ parts

$2.010

1k+ parts

-

10k+ parts

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500

$2.030

$2.010

-

-

Rochester

USA . 1,105 parts In-Stock

1+ parts

-

100+ parts

$0.280

1k+ parts

$0.233

10k+ parts

$0.207

1,105

-

$0.280

$0.233

$0.207

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,193 parts In-Stock

1+ parts

$0.354

100+ parts

-

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2,193

$0.354

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$0.447

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35

$0.447

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VNN

France . 4,181 parts In-Stock

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4,181

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Vyrian

USA . 3,338 parts In-Stock

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3,338

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Magnum Semiconductors LLP

India . 1,100 parts In-Stock

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1,100

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LIBRA Elektronik GmbH

Germany . 133 parts In-Stock

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133

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,018 parts In-Stock

1+ parts

$0.269

100+ parts

-

1k+ parts

-

10k+ parts

$0.264

6,018

$0.269

-

-

$0.264

Argo Parts USA

USA . 2,563 parts In-Stock

1+ parts

$0.269

100+ parts

-

1k+ parts

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10k+ parts

$0.261

2,563

$0.269

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-

$0.261

Ampacity Inc.

Singapore . 1,142 parts In-Stock

1+ parts

$0.317

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-

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1,142

$0.317

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Corphita

USA . 1,684 parts In-Stock

1+ parts

$0.336

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1,684

$0.336

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Corohmni

South Africa . 491 parts In-Stock

1+ parts

$0.373

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491

$0.373

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.447

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1,000

$0.447

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.030

100+ parts

$2.010

1k+ parts

$1.928

10k+ parts

-

500

$2.030

$2.010

$1.928

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AZTECH Wire

Italy . 1,021 parts In-Stock

1+ parts

$19.220

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1,021

$19.220

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Perfect Parts

USA . 10,688 parts In-Stock

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10,688

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SupplyDigital Components

Austria . 8,281 parts In-Stock

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8,281

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TANS Electronics

Latvia . 7,711 parts In-Stock

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7,711

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Problanco Electronics

Mexico . 6,584 parts In-Stock

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6,584

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Kulean Microsystems

USA . 3,256 parts In-Stock

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3,256

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Infinite Electronics LLP (Excess)

. 2,510 parts In-Stock

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2,510

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UHIMA Technologies

Türkiye . 842 parts In-Stock

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842

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Overview

Experience the unrivaled performance and reliability of the BD680AG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJTs) like the BD680AG, designed for amplifier applications. With its advanced features such as a built-in diode and resistor, this PNP transistor offers exceptional value and efficiency. Trust Onsemi to provide you with cutting-edge technology that meets all your power management needs. Elevate your projects with the BD680AG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can handle large currents efficiently.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain and built-in diode and resistor add convenience in circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in audio or signal processing circuits.

Maximum Power Dissipation (Abs): 40 W

Capable of dissipating relatively high power levels, suitable for applications where heat generation is a concern.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various circuit configurations.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making the product robust and suitable for harsh environments.

No. of Terminals: 3

Simplifies circuit design and reduces complexity in wiring.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, making it suitable for industrial or automotive applications.

Maximum Collector-Emitter Voltage: 80 V

Can handle relatively high voltages, increasing the range of applications it can be used in.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and better temperature stability compared to other materials.

Maximum Collector Current (IC): 4 A

Capable of handling high currents without overheating, making it suitable for power amplification applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD680AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD680AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-588-4133, 5961015884133

NIIN

015884133

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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