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2N6042G

Onsemi

2N6042G by Onsemi

2N6042G by Onsemi is a PNP BJT with 100V VCEO, 8A IC, and 75W power dissipation. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With an hFE of 1000, it operates b/w -65°C to 150°C in a flange mount package.

Median Price

$0.642

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 21 parts In-Stock

1+ parts

$0.466

100+ parts

$0.438

1k+ parts

$0.396

10k+ parts

$0.396

21

$0.466

$0.438

$0.396

$0.396

Adafruit Industries

USA . 40 parts In-Stock

1+ parts

$0.817

100+ parts

$0.743

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$0.670

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40

$0.817

$0.743

$0.670

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Digiode

USA . 1,586 parts In-Stock

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$0.443

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Vyrian

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Flip Electronics

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Inventory MP

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40

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MISTER SPROCKETS

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Bristol Electronics

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Corphita

USA . 1,684 parts In-Stock

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$0.419

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1,684

$0.419

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Component Stockers USA

USA . 871 parts In-Stock

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$0.450

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$0.430

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871

$0.450

$0.430

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Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$0.817

100+ parts

$0.743

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$0.670

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40

$0.817

$0.743

$0.670

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Corohmni

South Africa . 56 parts In-Stock

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$1.776

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AZTECH Wire

Italy . 372 parts In-Stock

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$10.440

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Native Components

USA . 596 parts In-Stock

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$13.088

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Northwest PG Solutions

USA . 1,305 parts In-Stock

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$14.397

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$12.957

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

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Lixinc

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Kulean Microsystems

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 2,925 parts In-Stock

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SupplyDigital Components

Austria . 2,404 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Perfect Parts

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iodParts Technologies Inc.

India . 1,150 parts In-Stock

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UHIMA Technologies

Türkiye . 381 parts In-Stock

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Assy Fe

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Overview

Power up your projects with the 2N6042G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers high-quality Power Bipolar Junction Transistors that are built to last. The 2N6042G features a PNP polarity, DARLINGTON configuration with a built-in diode and resistor, making it perfect for switching applications. With a maximum power dissipation of 75W and a maximum collector-emitter voltage of 100V, this transistor offers unmatched performance and reliability. Trust Onsemi for all your power transistor needs and experience the difference in quality and value that our products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good insulation properties and is cost-effective, making the product durable and affordable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power switching applications, making this product suitable for such purposes.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor add protection and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product offers efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring stability and durability in various applications.

Maximum Power Dissipation (Abs): 75 W

With a high power dissipation rating, this product can handle significant power levels without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers secure mounting options, ideal for industrial applications where stability is key.

Minimum DC Current Gain (hFE): 1000

A high DC current gain ensures reliable amplification and switching performance in a circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions without compromising performance.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating allows this transistor to be used in a variety of high voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a durable and long-lasting choice.

Minimum Operating Temperature: -65 °C

With a low minimum operating temperature, this product can be used in a wide range of environments without any issues.

Maximum Collector Current (IC): 8 A

The high collector current rating allows this transistor to handle large currents, making it suitable for high power applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring reliable connections in a circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit board layout and makes installation easier and more efficient.

Case Connection: COLLECTOR

The collector case connection enhances thermal stability and allows for efficient heat dissipation, ensuring the transistor operates reliably under high power conditions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6042G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N6042G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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