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2N6035G

Onsemi

2N6035G by Onsemi

The Onsemi 2N6035G is a PNP power BJT with a max collector current of 4A and a min DC current gain of 100. It has a max operating temperature of 150 °C, making it suitable for amplifier applications. The transistor features a Darlington configuration with built-in diode and resistor, housed in a plastic/epoxy package with matte tin terminal finish.

Median Price

$0.432

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 19,997 parts In-Stock

1+ parts

-

100+ parts

$0.432

1k+ parts

$0.359

10k+ parts

$0.320

19,997

-

$0.432

$0.359

$0.320

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 935 parts In-Stock

1+ parts

$0.336

100+ parts

-

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-

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935

$0.336

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Vyrian

USA . 5,872 parts In-Stock

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5,872

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ACDS - Activité Composants Distribution Service

France . 1,805 parts In-Stock

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1,805

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 19,902 parts In-Stock

1+ parts

$0.301

100+ parts

-

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19,902

$0.301

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-

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Corphita

USA . 1,525 parts In-Stock

1+ parts

$0.319

100+ parts

-

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1,525

$0.319

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Corohmni

South Africa . 193 parts In-Stock

1+ parts

$0.354

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193

$0.354

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AZTECH Wire

Italy . 234 parts In-Stock

1+ parts

$9.870

100+ parts

-

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234

$9.870

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Native Components

USA . 463 parts In-Stock

1+ parts

$11.035

100+ parts

-

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463

$11.035

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Northwest PG Solutions

USA . 680 parts In-Stock

1+ parts

$12.139

100+ parts

$10.925

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-

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680

$12.139

$10.925

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SupplyDigital Components

Austria . 6,952 parts In-Stock

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6,952

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Kulean Microsystems

USA . 6,556 parts In-Stock

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6,556

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Perfect Parts

USA . 4,825 parts In-Stock

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4,825

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Problanco Electronics

Mexico . 2,649 parts In-Stock

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2,649

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 615 parts In-Stock

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615

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TANS Electronics

Latvia . 231 parts In-Stock

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231

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Overview

Enhance your amplifier projects with the 2N6035G Power Bipolar Junction Transistor from Onsemi. Manufactured with top-quality materials, this PNP transistor features a Darlington configuration with a built-in diode and resistor, ensuring reliable performance. Ideal for amplifier applications, its high DC current gain and low power dissipation make it a valuable component for your electronic designs. Trust Onsemi's expertise in producing high-performance transistors and elevate your projects with the 2N6035G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design by incorporating necessary components within the transistor package, saving space and reducing external components.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, offering high performance and reliability in signal amplification.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling high power levels without overheating, ensuring stable operation under demanding conditions.

Maximum Collector-Emitter Voltage: 60 V

Allows for use in applications requiring high voltage handling capabilities, expanding the range of potential uses for the transistor.

Maximum Collector Current (IC): 4 A

Can handle high current levels, making it suitable for power applications where a significant amount of current flow is required.

Nominal Transition Frequency (fT): 25 MHz

Offers fast switching speeds and high-frequency operation, making it ideal for RF applications or high-speed circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6035G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6035G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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