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2N6036G

Onsemi

2N6036G by Onsemi

2N6036G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 4A, and min DC current gain of 100. With a package style of flange mount and operating temp up to 150 °C, it offers high performance in various electronic designs.

Median Price

$0.520

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 12,000 parts In-Stock

1+ parts

$0.360

100+ parts

$0.350

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$0.350

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-

12,000

$0.360

$0.350

$0.350

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Newark

USA . 597 parts In-Stock

1+ parts

$0.709

100+ parts

$0.396

1k+ parts

$0.325

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597

$0.709

$0.396

$0.325

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Future Electronics

Canada . 500 parts In-Stock

1+ parts

-

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$0.520

10k+ parts

$0.500

500

-

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$0.520

$0.500

Flip Electronics (Authorized)

USA . 475 parts In-Stock

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-

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475

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Distributors (In-Stock)

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Digiode

USA . 1,645 parts In-Stock

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$0.342

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1,645

$0.342

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Vyrian

USA . 3,954 parts In-Stock

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3,954

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Cyclops Electronics Ltd

UK . 1,145 parts In-Stock

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1,145

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NAC Semi

USA . 1,000 parts In-Stock

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$0.808

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1,000

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$0.808

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IBS Electronics

USA . 500 parts In-Stock

1+ parts

-

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$0.676

10k+ parts

$0.650

500

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$0.676

$0.650

Flip Electronics

USA . 475 parts In-Stock

1+ parts

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475

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Inventory MP

USA . 327 parts In-Stock

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327

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Bristol Electronics

USA . 327 parts In-Stock

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327

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Diverse Electronics

Canada . 250 parts In-Stock

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Atlantic Semiconductor

USA . 60 parts In-Stock

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60

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Distributors (Availability)

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Corphita

USA . 923 parts In-Stock

1+ parts

$0.324

100+ parts

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923

$0.324

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Corohmni

South Africa . 62 parts In-Stock

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$0.360

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62

$0.360

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Continental Prestige Electronics

USA . 602 parts In-Stock

1+ parts

$0.514

100+ parts

$0.272

1k+ parts

$0.217

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602

$0.514

$0.272

$0.217

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Component Stockers USA

USA . 1,189 parts In-Stock

1+ parts

$0.600

100+ parts

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$0.540

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1,189

$0.600

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$0.540

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Native Components

USA . 370 parts In-Stock

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$24.605

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370

$24.605

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Northwest PG Solutions

USA . 1,907 parts In-Stock

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$27.065

100+ parts

$24.359

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1,907

$27.065

$24.359

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Perfect Parts

USA . 8,292 parts In-Stock

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TANS Electronics

Latvia . 8,281 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,468 parts In-Stock

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SupplyDigital Components

Austria . 4,021 parts In-Stock

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Kulean Microsystems

USA . 3,815 parts In-Stock

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Problanco Electronics

Mexico . 3,492 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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UHIMA Technologies

Türkiye . 832 parts In-Stock

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iodParts Technologies Inc.

India . 620 parts In-Stock

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620

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Overview

Enhance your electronic projects with the high-quality 2N6036G Power Bipolar Junction Transistor from Onsemi. This PNP transistor boasts a Darlington configuration with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150 °C, this transistor offers exceptional performance and reliability. Trust in Onsemi's reputation for innovation and excellence, and experience the value and benefits this product brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable package for the transistor.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP devices in a circuit.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration along with built-in diode and resistor provides high current gain and protection in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to mount and secure in various electronic devices.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy and secure soldering onto PCBs.

Maximum Power Dissipation (Abs): 1.5 W

With a maximum power dissipation of 1.5 W, the transistor can handle moderate power loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy installation and heat dissipation.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures stable and predictable amplification of signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, the transistor can withstand elevated temperatures in various environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80 V allows for safe operation in a wide range of voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, the transistor can handle high current loads with ease.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies the connection of the transistor in circuit designs.

Nominal Transition Frequency (fT): 25 MHz

With a nominal transition frequency of 25 MHz, the transistor is suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6036G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6036G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-01-065-9371, 5961010659371

NIIN

010659371

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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