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BD440G

Onsemi

BD440G by Onsemi

BD440G by Onsemi is a PNP BJT transistor with 60V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. The through-hole package with flange mount suits various electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 10,863 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 71 parts In-Stock

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Component Stockers USA

USA . 350 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 6,794 parts In-Stock

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Kulean Microsystems

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Alle Elektronik GmbH

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Authorized Procurement Solutions

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Problanco Electronics

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TANS Electronics

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Corphita

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Northwest PG Solutions

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SupplyDigital Components

Austria . 938 parts In-Stock

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UHIMA Technologies

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Overview

Unleash the power of innovation with the BD440G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers seamless performance and reliability in a compact, rectangular package. With a maximum collector-emitter voltage of 60V and a peak power dissipation of 36W, the BD440G is the ideal choice for your electronic projects. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your designs. Elevate your creations with the BD440G - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power switching applications, making this product ideal for such purposes.

Configuration: SINGLE

Simplified design and easy integration into circuits, making it convenient for use.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Power Dissipation (Abs): 36 W

Ability to handle high power dissipation, allowing for reliable operation under demanding conditions.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring a maximum voltage of up to 60V, providing versatility in usage.

Maximum Collector Current (IC): 4 A

Capable of handling high currents, making it suitable for applications that require significant current flow.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency enables fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD440G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD440G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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