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BD442

Onsemi

BD442 by Onsemi

The Onsemi BD442 is a PNP BJT transistor with 80V VCEO, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. The through-hole package style makes it suitable for various electronic designs.

Median Price

$0.187

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 5,575 parts In-Stock

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$0.130

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$0.130

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Farnell

UK . 5,750 parts In-Stock

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$0.196

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$0.132

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$0.110

5,750

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$0.196

$0.132

$0.110

Element14

Singapore . 5,750 parts In-Stock

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-

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$0.340

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$0.229

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$0.191

5,750

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$0.340

$0.229

$0.191

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

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$0.172

1k+ parts

$0.143

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$0.127

3,000

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$0.172

$0.143

$0.127

DigiKey

USA . 3,000 parts In-Stock

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$0.210

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Verical

USA . 3,000 parts In-Stock

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$0.178

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Distributors (In-Stock)

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Digiode

USA . 4,845 parts In-Stock

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$0.124

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$0.124

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Vyrian

USA . 7,951 parts In-Stock

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$0.131

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$0.131

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Maritex

Poland . 1,555 parts In-Stock

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$0.175

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$0.103

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$0.091

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$0.082

1,555

$0.175

$0.103

$0.091

$0.082

American Microsemiconductor Inc.

USA . 92 parts In-Stock

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$3.860

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$3.860

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Anansix

USA . 4,354 parts In-Stock

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Halfin

Belgium . 3,976 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,400 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 891 parts In-Stock

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891

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ComSIT Distribution GmbH

Germany . 790 parts In-Stock

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790

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TME

Poland . 740 parts In-Stock

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$0.117

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$0.104

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$0.094

740

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$0.104

$0.094

ECAB

Sweden . 632 parts In-Stock

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632

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Freddi Giovanni

Italy . 200 parts In-Stock

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200

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GES GmbH

Germany . 174 parts In-Stock

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174

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Fibra_Brandt Electronic GMBH

Germany . 129 parts In-Stock

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Pegasus Components GmbH

Germany . 123 parts In-Stock

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A2Z Electronics, Inc.

USA . 74 parts In-Stock

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Standard Data Resources

USA . 51 parts In-Stock

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ICP Electronique

France . 29 parts In-Stock

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LittleDiode

UK . 23 parts In-Stock

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Bristol Electronics

USA . 18 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 5,569 parts In-Stock

1+ parts

$0.118

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5,569

$0.118

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IDEA Electronic Components Group

UK . 750 parts In-Stock

1+ parts

$0.549

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$0.494

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750

$0.549

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$0.494

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Corohmni

South Africa . 142 parts In-Stock

1+ parts

$0.711

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142

$0.711

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MKK Technologies

India . 1,598 parts In-Stock

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$1.033

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1,598

$1.033

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DigiPath Technology Company

USA . 1,598 parts In-Stock

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$1.033

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1,598

$1.033

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Modulus Dynamics

Lithuania . 21,898 parts In-Stock

1+ parts

$1.732

100+ parts

$1.663

1k+ parts

$1.593

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21,898

$1.732

$1.663

$1.593

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Native Components

USA . 2,442 parts In-Stock

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$28.700

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2,442

$28.700

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Northwest PG Solutions

USA . 5,346 parts In-Stock

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$97.883

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5,346

$97.883

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QUARKTWIN TECHNOLOGY LTD

USA . 14,938 parts In-Stock

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14,938

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Kulean Microsystems

USA . 7,835 parts In-Stock

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7,835

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A-Z Elektronik GmbH

Germany . 6,885 parts In-Stock

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6,885

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Alle Elektronik GmbH

Germany . 4,590 parts In-Stock

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4,590

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SupplyDigital Components

Austria . 4,063 parts In-Stock

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4,063

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Problanco Electronics

Mexico . 3,841 parts In-Stock

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Perfect Parts

USA . 3,304 parts In-Stock

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

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$0.127

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Supply Digital

USA . 1,741 parts In-Stock

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1,741

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TANS Electronics

Latvia . 1,596 parts In-Stock

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1,596

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Cyclops Electronics Ltd (Excess)

UK . 1,400 parts In-Stock

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1,400

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Glotronic Ltd.

UK . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 830 parts In-Stock

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830

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Assy Fe

Spain . 633 parts In-Stock

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Parana Technologies

USA . 515 parts In-Stock

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$0.657

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515

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$0.657

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Overview

Upgrade your electronic devices with the high-quality BD442 power transistor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability in their products. The BD442 belongs to the Power Bipolar Junction Transistors category, making it perfect for switching applications. With a maximum power dissipation of 36W and a maximum collector current of 4A, this PNP transistor offers exceptional value and benefits to customers looking for efficient and durable components. Trust Onsemi for superior performance and innovation in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of PLASTIC/EPOXY material provides durability and resistance to external elements, ensuring a longer lifespan for the product.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration with other PNP components in a circuit, making the design process more convenient.

Configuration: SINGLE

The SINGLE configuration simplifies circuit design and allows for easier installation and troubleshooting.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Terminal Form: THROUGH-HOLE

The THROUGH-HOLE terminal form ensures easy and secure connections, making it suitable for various applications.

Maximum Power Dissipation: 36 W

With a high maximum power dissipation of 36 W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable performance in high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80 V, this transistor can handle high voltages, making it suitable for a wide range of applications.

Maximum Collector Current: 4 A

The high maximum collector current of 4 A allows for handling of high current loads, making it suitable for power applications.

Nominal Transition Frequency: 3 MHz

The high nominal transition frequency of 3 MHz allows for fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD442 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD442 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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