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BD442STU

Onsemi

BD442STU by Onsemi

BD442STU by Onsemi is a PNP Power BJT with 80V VCEO, 4A IC, and 36W Ptot. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. The through-hole transistor in plastic/epoxy package is suitable for flange mount configurations.

Median Price

$0.213

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,769 parts In-Stock

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-

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$0.120

9,769

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$0.120

Flip Electronics (Authorized)

USA . 9,769 parts In-Stock

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9,769

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Rochester

USA . 4,062 parts In-Stock

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$0.230

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$0.191

10k+ parts

$0.170

4,062

-

$0.230

$0.191

$0.170

Verical

USA . 3,829 parts In-Stock

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$0.213

3,829

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$0.213

Distributors (In-Stock)

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Vyrian

USA . 1,060 parts In-Stock

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$0.173

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1,060

$0.173

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Digiode

USA . 653 parts In-Stock

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$0.175

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653

$0.175

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TME

Poland . 4 parts In-Stock

1+ parts

$0.718

100+ parts

$0.261

1k+ parts

$0.218

10k+ parts

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4

$0.718

$0.261

$0.218

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Flip Electronics

USA . 9,769 parts In-Stock

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9,769

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DigiKey Marketplace

USA . 9,769 parts In-Stock

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9,769

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ACDS - Activité Composants Distribution Service

France . 19 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,895 parts In-Stock

1+ parts

$0.166

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1,895

$0.166

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Corohmni

South Africa . 423 parts In-Stock

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$0.173

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423

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QUARKTWIN TECHNOLOGY LTD

USA . 17,718 parts In-Stock

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GreenTree Electronics

Israel . 9,000 parts In-Stock

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Perfect Parts

USA . 8,602 parts In-Stock

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SupplyDigital Components

Austria . 8,135 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,802 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,868 parts In-Stock

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Continental Prestige Electronics

USA . 3,829 parts In-Stock

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$0.166

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Supply Digital

USA . 2,037 parts In-Stock

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Kulean Microsystems

USA . 1,876 parts In-Stock

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1,876

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Problanco Electronics

Mexico . 1,118 parts In-Stock

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UHIMA Technologies

Türkiye . 976 parts In-Stock

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976

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TANS Electronics

Latvia . 417 parts In-Stock

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Northwest PG Solutions

USA . 187 parts In-Stock

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Native Components

USA . 140 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BD442STU Power Bipolar Junction Transistor (BJT). Manufactured by a trusted industry leader, this PNP transistor is perfect for switching applications, offering reliability and efficiency. With a maximum power dissipation of 36W and a maximum operating temperature of 150 °C, this transistor is designed to meet your high-performance needs. Whether you're looking to optimize your circuit design or enhance your electronics project, the BD442STU delivers unparalleled value and performance. Upgrade your technology today with Onsemi's BD442STU and experience the difference in quality and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Highly durable material which ensures longevity and reliability of the product.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high power applications, making this product suitable for switching purposes.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor.

Transistor Application: SWITCHING

Specifically designed for switching applications, providing efficient performance in such scenarios.

Maximum Power Dissipation (Abs): 36 W

Capable of handling high power dissipation, making it suitable for applications requiring high power levels.

Maximum Collector-Emitter Voltage: 80 V

Can withstand high voltages, making it suitable for a variety of high voltage applications.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, making it suitable for applications requiring high current levels.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD442STU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD442STU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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