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BD440

Onsemi

BD440 by Onsemi

The Onsemi BD440 is a PNP BJT transistor with 60V VCE, 4A IC, and 36W power dissipation. Ideal for switching applications, it has a hFE of 25 and operates up to 150 °C. Its through-hole package with flange mount style makes it suitable for various electronic designs.

Median Price

$0.217

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 5,807 parts In-Stock

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$0.134

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Farnell

UK . 5,807 parts In-Stock

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$0.217

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$0.147

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$0.109

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$0.217

$0.147

$0.109

Element14

Singapore . 5,807 parts In-Stock

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-

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$0.346

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$0.234

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$0.194

5,807

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$0.346

$0.234

$0.194

Distributors (In-Stock)

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Digiode

USA . 5,641 parts In-Stock

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$0.124

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Vyrian

USA . 3,606 parts In-Stock

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$0.131

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Anansix

USA . 4,311 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Halfin

Belgium . 1,665 parts In-Stock

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TME

Poland . 1,000 parts In-Stock

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$0.100

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$0.089

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$0.080

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$0.100

$0.089

$0.080

ComSIT Distribution GmbH

Germany . 829 parts In-Stock

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Freddi Giovanni

Italy . 509 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 460 parts In-Stock

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J2 Sourcing AB

Sweden . 300 parts In-Stock

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Sinequanon

UK . 300 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 258 parts In-Stock

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LittleDiode

UK . 174 parts In-Stock

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ICP Electronique

France . 50 parts In-Stock

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GES GmbH

Germany . 42 parts In-Stock

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ECAB

Sweden . 14 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 13 parts In-Stock

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Goldney Electronics S.L.

Spain . 3 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 6,025 parts In-Stock

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$0.118

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$0.118

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Corohmni

South Africa . 169 parts In-Stock

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$0.131

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169

$0.131

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Modulus Dynamics

Lithuania . 2,727 parts In-Stock

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$0.361

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$0.347

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$0.332

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2,727

$0.361

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$0.332

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IDEA Electronic Components Group

UK . 392 parts In-Stock

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$1.387

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$1.249

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392

$1.387

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$1.249

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MKK Technologies

India . 2,258 parts In-Stock

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$2.609

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2,258

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DigiPath Technology Company

USA . 2,258 parts In-Stock

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$2.609

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Native Components

USA . 2,408 parts In-Stock

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$6.891

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Northwest PG Solutions

USA . 5,173 parts In-Stock

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$11.363

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$10.227

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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Perfect Parts

USA . 39,200 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,347 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 7,047 parts In-Stock

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Kulean Microsystems

USA . 4,512 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 4,400 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,077 parts In-Stock

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Glotronic Ltd.

UK . 2,800 parts In-Stock

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Supply Digital

USA . 2,783 parts In-Stock

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TANS Electronics

Latvia . 2,295 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,240 parts In-Stock

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Parana Technologies

USA . 2,022 parts In-Stock

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$1.659

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Problanco Electronics

Mexico . 563 parts In-Stock

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Assy Fe

Spain . 158 parts In-Stock

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UHIMA Technologies

Türkiye . 110 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 22 parts In-Stock

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Overview

Looking for a high-quality power transistor that delivers exceptional performance in switching applications? Look no further than the BD440 by Onsemi. With its PNP configuration and maximum collector-emitter voltage of 60V, this single-terminal transistor offers reliability and efficiency like no other. Whether you're designing industrial control systems or automotive electronics, the BD440 provides the value, benefits, and advantages you need to bring your projects to life. Trust Onsemi's reputation for excellence and choose the BD440 for your next application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits where PNP transistors are required for proper operation.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in different setups.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in electronic circuits.

Maximum Power Dissipation (Abs): 36 W

With a high maximum power dissipation, this transistor can handle significant power levels without overheating.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage allows the transistor to be used in applications where higher voltages are present.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures that the transistor can amplify current effectively in a circuit.

Maximum Collector Current (IC): 4 A

The high maximum collector current rating allows the transistor to handle large currents safely.

Nominal Transition Frequency (fT): 3 MHz

The nominal transition frequency of 3 MHz indicates the speed at which the transistor can switch on and off, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD440 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD440 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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