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BD441

Onsemi

BD441 by Onsemi

The Onsemi BD441 is a NPN BJT transistor with 80V VCE, 4A IC, and 36W Pd. Ideal for switching applications, it has hFE of 15 and fT of 3MHz. The through-hole package with flange mount is made of plastic/epoxy material.

Median Price

$0.440

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

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Newark

USA . 31 parts In-Stock

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$1.150

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$0.605

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$0.484

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$0.419

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$1.150

$0.605

$0.484

$0.419

Element14

Singapore . 375 parts In-Stock

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$0.440

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$0.298

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$0.248

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Farnell

UK . 375 parts In-Stock

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$0.245

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Verical

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Digiode

USA . 4,846 parts In-Stock

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Vyrian

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American Microsemiconductor Inc.

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Chip Stock

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TME

Poland . 2,820 parts In-Stock

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Semi Source

USA . 1,613 parts In-Stock

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Fibra_Brandt Electronic GMBH

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Mil-Aero Solutions, Inc.

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Halfin

Belgium . 425 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 226 parts In-Stock

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Manotoh

Italy . 190 parts In-Stock

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GES GmbH

Germany . 138 parts In-Stock

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ComSIT Distribution GmbH

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LittleDiode

UK . 94 parts In-Stock

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Corel Iberica Componentes, S.L.

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EMSNET

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ECAB

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Huijzer Components

Netherlands . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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SOS electronic

Slovakia . 28 parts In-Stock

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$0.523

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ICP Electronique

France . 25 parts In-Stock

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Bristol Electronics

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Donberg Electronics Ltd

Ireland . 15 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 283 parts In-Stock

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$0.100

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Modulus Dynamics

Lithuania . 4,505 parts In-Stock

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$0.574

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$0.551

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$0.528

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$0.574

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$0.528

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Corphita

USA . 1,853 parts In-Stock

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$0.982

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IDEA Electronic Components Group

UK . 1,984 parts In-Stock

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$1.595

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$1.436

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MKK Technologies

India . 891 parts In-Stock

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$3.000

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DigiPath Technology Company

USA . 891 parts In-Stock

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$3.000

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Native Components

USA . 1,990 parts In-Stock

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$81.202

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$77.954

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$81.202

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$77.954

Component Stockers USA

USA . 406 parts In-Stock

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$99.990

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Metaverse IC Inc.

Canada . 88,168 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

USA . 8,353 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,823 parts In-Stock

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SupplyDigital Components

Austria . 5,919 parts In-Stock

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Northwest PG Solutions

USA . 5,886 parts In-Stock

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Perfect Parts

USA . 5,600 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,588 parts In-Stock

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Problanco Electronics

Mexico . 2,785 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,397 parts In-Stock

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Supply Digital

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Assy Fe

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Glotronic Ltd.

UK . 400 parts In-Stock

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Parana Technologies

USA . 179 parts In-Stock

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$1.907

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UHIMA Technologies

Türkiye . 170 parts In-Stock

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Overview

Enhance your power management solutions with the BD441 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors. Ideal for switching applications, this NPN transistor offers a maximum power dissipation of 36W and a maximum collector-emitter voltage of 80V. With a minimum DC current gain of 15, customers can trust in the performance and efficiency of this product. Upgrade your electronics with the BD441 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and connect the transistor securely.

Maximum Power Dissipation (Abs): 36 W

High power dissipation capability enables the transistor to handle demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for efficient heat dissipation, ensuring the transistor operates at optimal temperatures.

Minimum DC Current Gain (hFE): 15

High minimum DC current gain ensures stable and reliable amplification in circuits using this transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes this transistor suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows the transistor to handle high voltages without breakdown.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle large currents without saturation.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, making the transistor easy to use.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for easy soldering during assembly processes.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD441 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD441 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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