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BD675G

Onsemi

BD675G by Onsemi

BD675G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 40W and a min DC current gain of 750. This transistor is commonly used in amplifier applications.

Median Price

$0.343

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 10 parts In-Stock

1+ parts

$0.067

100+ parts

$0.067

1k+ parts

$0.067

10k+ parts

$0.067

10

$0.067

$0.067

$0.067

$0.067

Distrelec

Netherlands . 27 parts In-Stock

1+ parts

$0.697

100+ parts

$0.643

1k+ parts

$0.577

10k+ parts

$0.545

27

$0.697

$0.643

$0.577

$0.545

Rochester

USA . 1,592 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.285

10k+ parts

$0.254

1,592

-

$0.343

$0.285

$0.254

Distributors (In-Stock)

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Digiode

USA . 442 parts In-Stock

1+ parts

$0.268

100+ parts

-

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442

$0.268

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Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$0.454

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600

$0.454

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VNN

France . 18,481 parts In-Stock

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18,481

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DigiKey Marketplace

USA . 14,000 parts In-Stock

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14,000

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Vyrian

USA . 7,551 parts In-Stock

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7,551

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,009 parts In-Stock

1+ parts

$0.240

100+ parts

-

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-

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1,009

$0.240

-

-

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Corphita

USA . 618 parts In-Stock

1+ parts

$0.254

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-

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618

$0.254

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Corohmni

South Africa . 86 parts In-Stock

1+ parts

$0.282

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86

$0.282

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Netroflash

USA . 100 parts In-Stock

1+ parts

$0.454

100+ parts

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100

$0.454

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Microchip USA

USA . 503 parts In-Stock

1+ parts

$1.890

100+ parts

$1.870

1k+ parts

$1.870

10k+ parts

$1.860

503

$1.890

$1.870

$1.870

$1.860

AZTECH Wire

Italy . 538 parts In-Stock

1+ parts

$13.040

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538

$13.040

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Perfect Parts

USA . 31,300 parts In-Stock

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31,300

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Kulean Microsystems

USA . 5,711 parts In-Stock

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5,711

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 4,833 parts In-Stock

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4,833

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TANS Electronics

Latvia . 4,254 parts In-Stock

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4,254

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Problanco Electronics

Mexico . 1,098 parts In-Stock

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1,098

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UHIMA Technologies

Türkiye . 582 parts In-Stock

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582

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Computer Components Inc. - USA

USA . 503 parts In-Stock

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503

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Overview

Experience the power and reliability of the BD675G by Onsemi, a leading manufacturer in the industry. This power bipolar junction transistor is designed to deliver exceptional performance and efficiency in amplifier applications. With its NPN polarity and Darlington configuration, the BD675G offers seamless integration and enhanced functionality. The built-in diode and resistor further simplify installation and reduce the need for additional components. Its rectangular package shape and through-hole terminal form ensure easy and secure mounting. With a maximum collector-emitter voltage of 45V and a maximum collector current of 4A, this transistor can handle even the most demanding tasks. Trust the quality and expertise of Onsemi and unlock the true potential of your amplifier with the BD675G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other high-power applications, making this transistor suitable for such uses.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor help simplify the circuit design and save space on the circuit board.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering onto a circuit board.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation capacity, this transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy mounting and heat dissipation, which is important in high-power applications.

Minimum DC Current Gain (hFE): 750

High minimum DC current gain ensures a consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Maximum operating temperature of 150 °C allows for reliable performance even in high-temperature environments.

Maximum Collector-Emitter Voltage: 45 V

Capable of handling high collector-emitter voltages, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 4 A

Can handle high collector currents, making it suitable for applications that require high power output.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring a reliable connection.

Terminal Position: SINGLE

Single terminal position simplifies the connections and makes it easy to integrate into circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD675G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD675G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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