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2N5302G

Onsemi

2N5302G by Onsemi

The Onsemi 2N5302G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 30A. It has a min. DC current gain of 5 and can dissipate up to 200W power. Ideal for switching applications, it operates b/w -65 °C to 200°C temperatures with a transition frequency of 2MHz.

Median Price

$6.440

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,845 parts In-Stock

1+ parts

$5.670

100+ parts

$5.560

1k+ parts

$5.440

10k+ parts

-

1,845

$5.670

$5.560

$5.440

-

Newark

USA . 200 parts In-Stock

1+ parts

$6.440

100+ parts

$4.820

1k+ parts

$4.190

10k+ parts

-

200

$6.440

$4.820

$4.190

-

Farnell

UK . 2,053 parts In-Stock

1+ parts

$7.294

100+ parts

-

1k+ parts

-

10k+ parts

-

2,053

$7.294

-

-

-

Element14

Singapore . 337 parts In-Stock

1+ parts

$9.900

100+ parts

$7.410

1k+ parts

$5.610

10k+ parts

$5.410

337

$9.900

$7.410

$5.610

$5.410

Verical

USA . 542 parts In-Stock

1+ parts

-

100+ parts

$4.875

1k+ parts

$4.362

10k+ parts

$4.112

542

-

$4.875

$4.362

$4.112

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,859 parts In-Stock

1+ parts

$4.132

100+ parts

-

1k+ parts

-

10k+ parts

-

1,859

$4.132

-

-

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Vyrian

USA . 2,315 parts In-Stock

1+ parts

-

100+ parts

-

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-

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2,315

-

-

-

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Flip Electronics

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

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1,300

-

-

-

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Extreme Components

USA . 25 parts In-Stock

1+ parts

-

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-

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25

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 96 parts In-Stock

1+ parts

$0.891

100+ parts

-

1k+ parts

-

10k+ parts

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96

$0.891

-

-

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Northwest PG Solutions

USA . 1,671 parts In-Stock

1+ parts

$0.980

100+ parts

-

1k+ parts

-

10k+ parts

-

1,671

$0.980

-

-

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.765

100+ parts

$1.606

1k+ parts

$1.447

10k+ parts

-

100

$1.765

$1.606

$1.447

-

Corphita

USA . 294 parts In-Stock

1+ parts

$3.915

100+ parts

-

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-

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294

$3.915

-

-

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Corohmni

South Africa . 346 parts In-Stock

1+ parts

$4.350

100+ parts

-

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346

$4.350

-

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Continental Prestige Electronics

USA . 2,153 parts In-Stock

1+ parts

$5.520

100+ parts

-

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2,153

$5.520

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AZTECH Wire

Italy . 716 parts In-Stock

1+ parts

$15.390

100+ parts

-

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716

$15.390

-

-

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Microchip USA

USA . 365 parts In-Stock

1+ parts

$27.105

100+ parts

-

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365

$27.105

-

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Glotronic Ltd.

UK . 1,970 parts In-Stock

1+ parts

-

100+ parts

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1,970

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SupplyDigital Components

Austria . 791 parts In-Stock

1+ parts

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100+ parts

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791

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TANS Electronics

Latvia . 586 parts In-Stock

1+ parts

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586

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Perfect Parts

USA . 484 parts In-Stock

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484

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Kulean Microsystems

USA . 153 parts In-Stock

1+ parts

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153

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UHIMA Technologies

Türkiye . 28 parts In-Stock

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28

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Problanco Electronics

Mexico . 4 parts In-Stock

1+ parts

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4

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Overview

Looking to power up your electronics with a reliable and high-quality transistor? Look no further than the 2N5302G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum power dissipation of 200W and a temperature range of -65 °C to 200°C, this NPN transistor offers exceptional performance and durability. Upgrade your devices today with the 2N5302G and experience the superior value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity and can handle higher power dissipation, making this transistor suitable for applications requiring high power.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications and are commonly available, making this transistor easy to source and integrate into circuits.

Configuration: SINGLE

Single configuration allows for straightforward circuit design and implementation, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for use in power control circuits.

Package Shape: ROUND

Round packages are compact and space-saving, making this transistor suitable for applications where space is limited.

Maximum Power Dissipation (Abs): 200 W

With a high power dissipation capability, this transistor can handle high power levels without overheating, ensuring reliability in demanding applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating makes this transistor suitable for circuits that operate at higher voltages, providing versatility in design.

Nominal Transition Frequency (fT): 2 MHz

The high nominal transition frequency allows for fast operation and high-speed switching, making this transistor ideal for applications that require rapid response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5302G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5302G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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