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2N5303

Texas Instruments

2N5303 by Texas Instruments

2N5303 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 200W, max. collector current of 20A, and max. collector-emitter voltage of 80V. It is used for switching applications due to its single configuration and high transition frequency of 2MHz.

Median Price

$61.310

Lifecycle Status

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Microchip Technology

USA . 177 parts In-Stock

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Mouser Electronics

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TEDSS.com

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American Microsemiconductor Inc.

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IDEA Electronic Components Group

UK . 3,613 parts In-Stock

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$0.796

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$0.716

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ChromeModa Solutions

Germany . 1,989 parts In-Stock

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DigiPath Technology Company

USA . 1,929 parts In-Stock

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Corohmni

South Africa . 376 parts In-Stock

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Corphita

USA . 8,488 parts In-Stock

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Component Stockers USA

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Overview

Upgrade your electronic projects with the Texas Instruments 2N5303 Power Bipolar Junction Transistor. With a maximum power dissipation of 200W and a maximum collector current of 20A, this NPN transistor is perfect for switching applications. The quality of Texas Instruments ensures reliability and performance, offering customers peace of mind. Whether you're designing power supplies, motor controls, or audio amplifiers, the 2N5303 provides the value, benefits, and advantages you need to take your projects to the next level. Trust Texas Instruments for top-notch components that deliver superior results.

Feature Benefit Bullets

Package Body Material: METAL

Metal body ensures better heat dissipation, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile for various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off operations.

Package Shape: ROUND

Round shape allows for easy mounting and integration into round or cylindrical circuit designs.

No. of Terminals: 2

2 terminals make the transistor easy to connect and integrate into circuits.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating makes the transistor suitable for applications requiring higher voltage handling.

Maximum Collector Current (IC): 20 A

High collector current rating allows the transistor to handle large currents, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast switching speeds, making the transistor ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5303 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5303 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-484-5194, 5961004845194, 5961-00-568-5552, 5961005685552, 5961-14-307-3217, 5961143073217, 5961-99-118-6638, 5961991186638

NIIN

004845194, 005685552, 143073217, 991186638

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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