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2N5386

Texas Instruments

2N5386 by Texas Instruments

2N5386 by Texas Instruments is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 12A. It has a min. DC current gain of 10, ideal for switching applications at up to 175°C operating temperature. The package style is post/stud mount with a round shape and solder lug terminals, suitable for power applications requiring up to 3.5W dissipation.

Median Price

$221.053

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 52 parts In-Stock

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$53.130

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$53.130

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Bristol Electronics

USA . 50 parts In-Stock

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$388.976

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$285.897

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50

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Vyrian

USA . 8,287 parts In-Stock

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Digiode

USA . 2,166 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Dan-Mar Components

USA . 50 parts In-Stock

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50

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Mil-Aero Solutions, Inc.

USA . 49 parts In-Stock

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49

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ICP Electronique

France . 30 parts In-Stock

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PUI

USA . 16 parts In-Stock

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PC Components Company LLC

USA . 13 parts In-Stock

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Electronic Expediters

USA . 4 parts In-Stock

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Resion

USA . 3 parts In-Stock

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Native Components

USA . 206 parts In-Stock

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$1.640

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206

$1.640

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Parana Technologies

USA . 1,822 parts In-Stock

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$1.679

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$2.282

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$1.679

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$2.282

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Northwest PG Solutions

USA . 1,384 parts In-Stock

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$1.804

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$1.804

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DigiPath Technology Company

USA . 1,266 parts In-Stock

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$1.848

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$1.700

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1,266

$1.848

$1.700

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IDEA Electronic Components Group

UK . 1,421 parts In-Stock

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$1.886

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$1.697

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$1.886

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ChromeModa Solutions

Germany . 1,330 parts In-Stock

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$1.886

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$1.547

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$1.886

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AZTECH Wire

Italy . 822 parts In-Stock

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$6.195

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822

$6.195

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One Stop Electronics

USA . 768 parts In-Stock

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$14.050

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768

$14.050

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QUARKTWIN TECHNOLOGY LTD

USA . 25,756 parts In-Stock

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Microchip USA

USA . 5,670 parts In-Stock

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Corphita

USA . 4,751 parts In-Stock

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CPlus Electronics

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,000 parts In-Stock

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3,000

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Overview

Discover the power and reliability of the Texas Instruments 2N5386 Power Bipolar Junction Transistor. Manufactured with top-quality materials, this PNP transistor is perfect for switching applications. With a maximum power dissipation of 3.5W and a maximum collector current of 12A, this transistor offers exceptional performance and durability. Whether you're building electronic devices or working on industrial projects, the 2N5386 provides the efficiency and precision you need. Upgrade your designs with the trusted quality of Texas Instruments.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal for the package body material provides better heat dissipation, allowing the transistor to handle higher power dissipation levels effectively.

Polarity or Channel Type: PNP

The PNP polarity allows for easier integration in certain circuit designs where PNP transistors are preferred.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling the flow of current.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle demanding applications without overheating or failing.

Terminal Form: SOLDER LUG

The solder lug terminal form provides secure connections, making it easier to solder the transistor into a circuit.

No. of Terminals: 3

Having 3 terminals allows for easy connections and integration into circuits.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating allows for use in a wide range of voltage applications.

Maximum Collector Current (IC): 12 A

The high maximum collector current rating ensures that the transistor can handle high-current applications without issues.

Nominal Transition Frequency (fT): 30 MHz

The high nominal transition frequency enables the transistor to operate at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5386 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-61

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5386 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-99-118-6639, 5961991186639

NIIN

991186639

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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