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2N5387

Texas Instruments

2N5387 by Texas Instruments

2N5387 by Texas Instruments is a NPN BJT with 200V VCE, 7.5A IC, and 3.5W power dissipation. Ideal for amplifier applications, it has a min hFE of 5 and operates up to 175°C. The package style is post/stud mount with a round shape and solder lug terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,078 parts In-Stock

1+ parts

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4,078

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Vyrian

USA . 3,406 parts In-Stock

1+ parts

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3,406

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,863 parts In-Stock

1+ parts

$1.095

100+ parts

-

1k+ parts

$1.935

10k+ parts

-

1,863

$1.095

-

$1.935

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DigiPath Technology Company

USA . 59 parts In-Stock

1+ parts

$1.205

100+ parts

$1.109

1k+ parts

-

10k+ parts

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59

$1.205

$1.109

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ChromeModa Solutions

Germany . 6,067 parts In-Stock

1+ parts

$1.230

100+ parts

$1.009

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-

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6,067

$1.230

$1.009

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IDEA Electronic Components Group

UK . 1,541 parts In-Stock

1+ parts

$1.230

100+ parts

-

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$1.107

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1,541

$1.230

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$1.107

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AZTECH Wire

Italy . 264 parts In-Stock

1+ parts

$6.259

100+ parts

-

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264

$6.259

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Native Components

USA . 953 parts In-Stock

1+ parts

$11.411

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-

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953

$11.411

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Semicontronic

India . 200 parts In-Stock

1+ parts

$12.050

100+ parts

$11.749

1k+ parts

$11.688

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-

200

$12.050

$11.749

$11.688

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Northwest PG Solutions

USA . 928 parts In-Stock

1+ parts

$12.553

100+ parts

$11.297

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928

$12.553

$11.297

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Ampacity Inc.

Singapore . 814 parts In-Stock

1+ parts

$31.050

100+ parts

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814

$31.050

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One Stop Electronics

USA . 261 parts In-Stock

1+ parts

$44.050

100+ parts

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261

$44.050

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Corphita

USA . 3,262 parts In-Stock

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3,262

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Corohmni

South Africa . 447 parts In-Stock

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447

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Overview

Unleash the power of innovation with the 2N5387 by Texas Instruments. Designed with precision and expertise, this NPN Power Bipolar Junction Transistor is a game-changer in the world of amplifiers. With a maximum power dissipation of 3.5W and a collector current of 7.5A, this transistor delivers unmatched performance and reliability. Whether you're looking to amplify signals or power your electronic devices, the 2N5387 ensures optimal functionality and efficiency. Trust in Texas Instruments for quality products that exceed expectations. Elevate your projects with the 2N5387 today.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide good thermal conductivity and mechanical strength, making the transistor more durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, ensuring compatibility with a wide range of circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in signal processing and power boosting.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Maximum Collector-Emitter Voltage: 200 V

Capable of handling higher voltages, making it suitable for a variety of high-voltage applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5387 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-61

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5387 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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