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2N5388

New England Semiconductor

2N5388 by New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 7.5 A;

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1k+

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Vyrian

USA . 4,362 parts In-Stock

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Digiode

USA . 3,767 parts In-Stock

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Native Components

USA . 353 parts In-Stock

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$0.895

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$0.895

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Northwest PG Solutions

USA . 387 parts In-Stock

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$0.985

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Parana Technologies

USA . 756 parts In-Stock

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$1.181

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$1.986

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DigiPath Technology Company

USA . 932 parts In-Stock

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$1.300

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$1.196

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IDEA Electronic Components Group

UK . 2,141 parts In-Stock

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$1.327

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$1.194

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ChromeModa Solutions

Germany . 1,027 parts In-Stock

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$1.327

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$1.088

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AZTECH Wire

Italy . 255 parts In-Stock

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$10.444

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Ampacity Inc.

Singapore . 242 parts In-Stock

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$18.050

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One Stop Electronics

USA . 1,319 parts In-Stock

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Semicontronic

India . 970 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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CPlus Electronics

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Glotronic Ltd.

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Corphita

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Corohmni

South Africa . 146 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5388 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-61

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

100 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2.2 V

Trade Compliance

2N5388 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-99-116-6653, 5961991166653

NIIN

991166653

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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