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2N5389

Texas Instruments

2N5389 by Texas Instruments

2N5389 by Texas Instruments is a NPN BJT with 300V VCE, 7.5A IC, and 3.5W Ptot. Ideal for amplifier applications due to its high transition frequency of 15MHz and single configuration in a round package with solder lug terminals.

Median Price

$516.150

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14 parts In-Stock

1+ parts

$412.920

100+ parts

$388.140

1k+ parts

$363.370

10k+ parts

-

14

$412.920

$388.140

$363.370

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DigiKey

USA . 14 parts In-Stock

1+ parts

$516.150

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14

$516.150

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Verical

USA . 14 parts In-Stock

1+ parts

$516.150

100+ parts

$485.175

1k+ parts

$454.212

10k+ parts

-

14

$516.150

$485.175

$454.212

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 350 parts In-Stock

1+ parts

$40.056

100+ parts

$32.846

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-

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350

$40.056

$32.846

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

1+ parts

$94.880

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9

$94.880

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Digiode

USA . 2,376 parts In-Stock

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$456.627

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2,376

$456.627

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DigiKey Marketplace

USA . 14 parts In-Stock

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$499.890

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14

$499.890

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Vyrian

USA . 2,570 parts In-Stock

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2,570

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Electronic Expediters

USA . 4 parts In-Stock

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4

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Distributors (Availability)

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Native Components

USA . 313 parts In-Stock

1+ parts

$0.585

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-

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313

$0.585

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Northwest PG Solutions

USA . 725 parts In-Stock

1+ parts

$0.643

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725

$0.643

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Parana Technologies

USA . 128 parts In-Stock

1+ parts

$1.228

100+ parts

-

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$2.013

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128

$1.228

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$2.013

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DigiPath Technology Company

USA . 1,523 parts In-Stock

1+ parts

$1.352

100+ parts

$1.244

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1,523

$1.352

$1.244

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ChromeModa Solutions

Germany . 5,201 parts In-Stock

1+ parts

$1.380

100+ parts

$1.132

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5,201

$1.380

$1.132

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IDEA Electronic Components Group

UK . 90 parts In-Stock

1+ parts

$1.380

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$1.242

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90

$1.380

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$1.242

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Corphita

USA . 4,297 parts In-Stock

1+ parts

$432.594

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4,297

$432.594

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Microchip USA

USA . 7,224 parts In-Stock

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$692.100

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7,224

$692.100

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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Overview

Experience the power of quality with the 2N5389 by Texas Instruments. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unmatched performance in amplifier applications. Its NPN polarity and single configuration make it a versatile choice for various electronic projects. With a maximum power dissipation of 3.5W and a maximum collector-emitter voltage of 300V, this transistor delivers reliable and efficient operation. Trust Texas Instruments to provide you with top-of-the-line components that bring value and innovation to your designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide good thermal conductivity, ensuring heat is efficiently dissipated during operation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into systems.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Terminal Form: SOLDER LUG

Solder lugs facilitate easy and secure connections to other components in the circuit.

Maximum Power Dissipation (Abs): 3.5 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage allows for operation in circuits with higher voltage requirements.

Maximum Collector Current (IC): 7.5 A

The high maximum collector current enables the transistor to handle significant current loads.

Nominal Transition Frequency (fT): 15 MHz

The high nominal transition frequency indicates fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5389 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-61

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5389 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-496-6921, 5961004966921, 5961-14-369-7457, 5961143697457

NIIN

004966921, 143697457

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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