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2N5384

Texas Instruments

2N5384 by Texas Instruments

2N5384 by Texas Instruments is a PNP BJT transistor with 80V VCEO, 5A IC, and 30MHz fT. Ideal for switching applications, it has a max power dissipation of 2W and operates up to 175°C. The package style is post/stud mount with a metal body and solder lug terminals.

Median Price

$96.000

Lifecycle Status

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13

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1k+

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Bristol Electronics

USA . 30 parts In-Stock

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$96.000

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$81.235

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Vyrian

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Digiode

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ECAB

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PUI

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

France . 48 parts In-Stock

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North Shore Components

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Electronics Depot

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Resion

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Mil-Aero Solutions, Inc.

USA . 5 parts In-Stock

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Corel Iberica Componentes, S.L.

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Parana Technologies

USA . 1,692 parts In-Stock

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$1.065

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$1.919

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DigiPath Technology Company

USA . 1,636 parts In-Stock

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$1.173

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$1.079

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ChromeModa Solutions

Germany . 2,033 parts In-Stock

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$1.197

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$0.982

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IDEA Electronic Components Group

UK . 2,026 parts In-Stock

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$1.197

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$1.077

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Andel Nordic

Denmark . 5,106 parts In-Stock

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$6.368

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$6.114

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AZTECH Wire

Italy . 460 parts In-Stock

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$16.679

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One Stop Electronics

USA . 1,539 parts In-Stock

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Microchip USA

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NIA Electronics

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Montano Global Distributors

Canada . 4,539 parts In-Stock

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Glotronic Ltd.

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Corphita

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Ledger Components

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Northwest PG Solutions

USA . 914 parts In-Stock

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LMD Electronica

Estonia . 591 parts In-Stock

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Native Components

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LOOK Integrated Logistics

Peru . 290 parts In-Stock

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RTC Component Inc.

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Overview

Elevate your electronic projects with the 2N5384 power bipolar junction transistor by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers cutting-edge technology in every component they manufacture. The 2N5384 is perfect for switching applications, offering a maximum collector-emitter voltage of 80V and a maximum collector current of 5A. With a minimum DC current gain of 10 and a nominal transition frequency of 30MHz, this PNP transistor provides exceptional performance and efficiency. Trust Texas Instruments to provide you with the tools you need to bring your creations to life.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent thermal conductivity and helps in efficient heat dissipation, making the transistor suitable for high-power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching circuits and can control higher power levels than NPN transistors, making this product versatile for different applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to implement in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly turn on and off, making it ideal for use in power control circuits.

Package Shape: ROUND

Round package shape facilitates easy mounting and allows for efficient placement within a circuit layout.

Terminal Form: SOLDER LUG

Solder lug terminals provide a secure and reliable connection, ensuring stable performance in different operating conditions.

No. of Terminals: 4

Having 4 terminals allows for flexible circuit configurations and enables easy connection to other components.

Maximum Power Dissipation (Abs): 2 W

With a high power dissipation capability, this transistor can handle significant power loads without overheating or causing damage.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style simplifies installation and provides secure mounting options for different applications.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures reliable amplification and consistent performance in various circuit designs.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and harsh environments, improving its overall reliability.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80 V allows for safe operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer excellent electrical performance and reliability, making this product a suitable choice for demanding electronic applications.

Maximum Collector Current (IC): 5 A

Capable of handling a maximum collector current of 5 A, this transistor is suitable for medium to high-power applications where current handling is crucial.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and layout in a circuit, enhancing the overall usability of the transistor.

Case Connection: ISOLATED

Isolated case connection helps prevent short circuits and improves the overall safety and reliability of the transistor in various operating conditions.

Nominal Transition Frequency (fT): 30 MHz

With a high nominal transition frequency, this transistor can switch at high speeds, making it suitable for fast-switching applications requiring high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5384 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5384 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-247-2395, 5961002472395, 5961-14-358-0576, 5961143580576, 5961-99-118-6719, 5961991186719

NIIN

002472395, 143580576, 991186719

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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