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2N5385

Texas Instruments

2N5385 by Texas Instruments

2N5385 by Texas Instruments is a PNP BJT transistor with 80V VCE, 5A IC, and 30MHz fT. Ideal for switching applications due to its single configuration and 2W power dissipation. Its round package with solder lug terminals makes it suitable for post/stud mount installations.

Median Price

$10.000

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ace Electronics

USA . 19 parts In-Stock

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$10.000

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19

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Vyrian

USA . 5,791 parts In-Stock

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Digiode

USA . 2,660 parts In-Stock

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2,660

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Resion

USA . 17 parts In-Stock

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Microfarads

USA . 7 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 2 parts In-Stock

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2

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Electronic Expediters

USA . 1 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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First Choice Components Inc.

USA . 1 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 517 parts In-Stock

1+ parts

$0.381

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$0.366

517

$0.381

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$0.366

Northwest PG Solutions

USA . 76 parts In-Stock

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$0.419

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$0.370

76

$0.419

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$0.370

Parana Technologies

USA . 1,743 parts In-Stock

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$0.984

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$1.874

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1,743

$0.984

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$1.874

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DigiPath Technology Company

USA . 696 parts In-Stock

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$1.084

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$0.997

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696

$1.084

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IDEA Electronic Components Group

UK . 2,361 parts In-Stock

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$1.106

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$0.995

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2,361

$1.106

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ChromeModa Solutions

Germany . 583 parts In-Stock

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$1.106

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$0.907

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583

$1.106

$0.907

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AZTECH Wire

Italy . 542 parts In-Stock

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$5.254

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542

$5.254

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One Stop Electronics

USA . 535 parts In-Stock

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$18.050

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535

$18.050

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Ampacity Inc.

Singapore . 906 parts In-Stock

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$31.050

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906

$31.050

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Microchip USA

USA . 5,975 parts In-Stock

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$245.126

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West Coast Incorporated

USA . 3,655 parts In-Stock

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Corphita

USA . 1,516 parts In-Stock

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Perfect Parts

USA . 2 parts In-Stock

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Overview

Upgrade your electronic projects with the high-quality 2N5385 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments brings you top-tier Power Bipolar Junction Transistors for various applications, including switching. With its PNP polarity and single configuration, this transistor offers reliable performance and efficient power dissipation of up to 2W. The 2N5385 is designed for easy installation with solder lug terminals, making it a valuable addition to your toolkit. Experience the benefits of Texas Instruments' expertise and innovation with the 2N5385 transistor.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and good thermal conductivity, making the transistor suitable for high power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can handle high levels of current.

Configuration: SINGLE

Single configuration transistors are easy to work with and suitable for simple circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in such scenarios.

Package Shape: ROUND

Round shape allows for easy mounting and installation in various types of circuits.

Terminal Form: SOLDER LUG

Solder lug terminals provide a reliable and secure connection for the transistor.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit connections and configurations.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle moderate power levels effectively.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style allows for easy mounting on heatsinks or other surfaces for heat dissipation.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures proper amplification of the input signal.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can operate reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 80 V

Supports a maximum collector-emitter voltage of 80V, making it suitable for various voltage levels in circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads efficiently.

Terminal Position: UPPER

Upper terminal position makes it easy to connect the transistor in circuit layouts.

Case Connection: COLLECTOR

Collector case connection allows for easy integration into collector circuits for proper operation.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30MHz, this transistor can switch states rapidly, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5385 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-111

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5385 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-406-4233, 5961004064233, 5961-00-406-8723, 5961004068723, 5961-99-650-8052, 5961996508052

NIIN

004064233, 004068723, 996508052

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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