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2N5302

Texas Instruments

2N5302 by Texas Instruments

2N5302 by Texas Instruments is a NPN BJT transistor with 60V VCE, 30A IC, and 200W Ptot. Ideal for switching applications due to its high power dissipation and collector current capabilities. Its metal package body and flange mount style make it suitable for various industrial uses.

Median Price

$61.310

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

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Microchip Technology

USA . 215 parts In-Stock

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TEDSS.com

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American Microsemiconductor Inc.

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DF Sales Co.

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Bristol Electronics

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Digiode

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ICP Electronique

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Native Components

USA . 2,832 parts In-Stock

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$0.961

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Northwest PG Solutions

USA . 3,749 parts In-Stock

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$1.057

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IDEA Electronic Components Group

UK . 3,907 parts In-Stock

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$1.155

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ChromeModa Solutions

Germany . 452 parts In-Stock

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$1.478

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$1.212

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DigiPath Technology Company

USA . 1,612 parts In-Stock

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$2.413

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MKK Technologies

India . 467 parts In-Stock

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Corohmni

South Africa . 372 parts In-Stock

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Corphita

USA . 5,458 parts In-Stock

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Component Stockers USA

USA . 791 parts In-Stock

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$99.990

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Microchip USA

USA . 9,258 parts In-Stock

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Problanco Electronics

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Glotronic Ltd.

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Parana Technologies

USA . 2,578 parts In-Stock

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TANS Electronics

Latvia . 1,782 parts In-Stock

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SupplyDigital Components

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RTC Component Inc.

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Overview

Unlock the power of efficiency and reliability with the Texas Instruments 2N5302 Power Bipolar Junction Transistor. Manufactured by a trusted industry leader, this NPN transistor is a versatile solution for switching applications. With a maximum power dissipation of 200W, it offers high performance in a compact round package. Whether you're designing industrial equipment or automotive systems, the 2N5302 delivers the quality and value you need to bring your projects to life. Trust Texas Instruments for superior technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation, making the transistor more reliable and durable in high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance characteristics.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making it easier to implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient on/off transitions.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into various electronic systems.

Terminal Form: PIN/PEG

Pin/peg terminals provide secure connections and easy soldering during installation.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style simplifies the mounting process and provides a sturdy mechanical connection.

Minimum DC Current Gain (hFE): 5

Low minimum DC current gain allows for easy biasing and improved linearity in amplifier circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability and stability in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material provides good performance and reliability in electronic components.

Maximum Collector Current (IC): 30 A

High collector current rating allows the transistor to handle large current loads without damage.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB design and layout, making it easier to integrate into circuits.

Case Connection: COLLECTOR

Collector case connection provides better thermal management and efficient heat dissipation.

Nominal Transition Frequency (fT): 2 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5302 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5302 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-450-8594, 5961004508594, 5961-00-599-9707, 5961005999707, 5961-00-143-8041, 5961001438041, 5961-00-465-9907, 5961004659907, 5961-00-274-2408, 5961002742408, 5961-01-150-1671, 5961011501671, 5961-01-050-3636, 5961010503636, 5961-14-326-4715, 5961143264715, 5961-99-118-3255, 5961991183255

NIIN

004508594, 005999707, 001438041, 004659907, 002742408, 011501671, 010503636, 143264715, 991183255

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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