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2N5389

Solitron Devices

2N5389 by Solitron Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Power Dissipation (Abs): 3.5 W; Maximum Collector Current (IC): 7 A;

Median Price

$516.150

Lifecycle Status

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9

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1k+

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Rochester

USA . 14 parts In-Stock

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$412.920

100+ parts

$388.140

1k+ parts

$363.370

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$412.920

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DigiKey

USA . 14 parts In-Stock

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$516.150

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$516.150

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Verical

USA . 14 parts In-Stock

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$516.150

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$485.175

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$454.212

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14

$516.150

$485.175

$454.212

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Bristol Electronics

USA . 350 parts In-Stock

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$40.056

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$32.846

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$40.056

$32.846

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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$94.880

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Digiode

USA . 2,376 parts In-Stock

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$456.627

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DigiKey Marketplace

USA . 14 parts In-Stock

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$499.890

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Vyrian

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Electronic Expediters

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Native Components

USA . 313 parts In-Stock

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$0.585

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Northwest PG Solutions

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Parana Technologies

USA . 128 parts In-Stock

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$1.228

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$2.013

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$1.228

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DigiPath Technology Company

USA . 1,523 parts In-Stock

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$1.352

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$1.244

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ChromeModa Solutions

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$1.380

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$1.132

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$1.380

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IDEA Electronic Components Group

UK . 90 parts In-Stock

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$1.380

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$1.242

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Corphita

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$432.594

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Microchip USA

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5389 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Solitron Devices

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-61

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

100 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

2N5389 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-496-6921, 5961004966921, 5961-14-369-7457, 5961143697457

NIIN

004966921, 143697457

Manufacturer Highlights

Solitron Devices

Since 1959, Solitron has been an industry leader in power semiconductors. With corporate headquarters and manufacturing in West Palm Beach FL, our facility includes circuit design, wafer fabrication, power microelectronics assembly, packaging, electrical test and environmental screening. Certifications and qualifications include MIL-PRF-19500 for JAN/JANTX/JANTXV, MIL-PRF-38534 Class H, ISO 9001:2008 and AS9100 Rev C. Solitron also builds to customer supplied source control drawings and commercial off-the-shelf (COTS) standards. For over 50 years, Solitron has been dedicated to manufacturing power components for the most demanding high reliability applications including space, avionics and defense. Standard products include JFETs, MOSFETs, diodes, rectifiers, and voltage regulators. When standard solutions won’t fit the application, we can tailor products to meet specific electrical or mechanical requirements. Solitron’s design expertise has also provided customized versions of dc-dc converters, half/full bridge circuits, motor controllers, IGBTs, and PFC circuits to name a few. Looking forward, Solitron is developing the next generation of power technology for applications such as electric control to replace traditional hydraulic control systems in aircraft …… next generation high density radar ….. and extreme temperature downhole oil exploration. From innovation in process to design, Solitron is developing leading edge products to meet the most challenging power applications of the future.

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