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2N3772G

Onsemi

2N3772G by Onsemi

2N3772G by Onsemi is a NPN BJT transistor with 150W power dissipation, 60V max collector-emitter voltage, and 20A max collector current. Ideal for switching applications due to its single configuration and -65°C to 200°C operating temperature range.

Median Price

$5.237

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 960 parts In-Stock

1+ parts

$4.330

100+ parts

$3.184

1k+ parts

$2.286

10k+ parts

-

960

$4.330

$3.184

$2.286

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Farnell

UK . 115 parts In-Stock

1+ parts

$5.250

100+ parts

$3.930

1k+ parts

$3.760

10k+ parts

-

115

$5.250

$3.930

$3.760

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Distrelec

Netherlands . 43 parts In-Stock

1+ parts

$7.187

100+ parts

$6.000

1k+ parts

$4.802

10k+ parts

-

43

$7.187

$6.000

$4.802

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Rochester

USA . 1,636 parts In-Stock

1+ parts

-

100+ parts

$4.000

1k+ parts

$3.580

10k+ parts

$3.370

1,636

-

$4.000

$3.580

$3.370

Verical

USA . 1,184 parts In-Stock

1+ parts

-

100+ parts

$5.237

1k+ parts

$4.688

10k+ parts

$4.412

1,184

-

$5.237

$4.688

$4.412

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 53 parts In-Stock

1+ parts

$4.436

100+ parts

-

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-

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53

$4.436

-

-

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TME

Poland . 36 parts In-Stock

1+ parts

$7.070

100+ parts

$3.950

1k+ parts

-

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36

$7.070

$3.950

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Forefront Electronics and Design

USA . 1 parts In-Stock

1+ parts

$12.250

100+ parts

-

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-

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1

$12.250

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-

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Vyrian

USA . 8,959 parts In-Stock

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8,959

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Flip Electronics

USA . 1,300 parts In-Stock

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1,300

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Micros

Poland . 80 parts In-Stock

1+ parts

-

100+ parts

$3.342

1k+ parts

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80

-

$3.342

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Partservice

France . 80 parts In-Stock

1+ parts

-

100+ parts

$3.185

1k+ parts

$3.185

10k+ parts

$3.185

80

-

$3.185

$3.185

$3.185

Micros sp.j. W. Kędra i J. Lic

Poland . 60 parts In-Stock

1+ parts

-

100+ parts

$3.412

1k+ parts

$3.412

10k+ parts

$3.412

60

-

$3.412

$3.412

$3.412

MISTER SPROCKETS

USA . 3 parts In-Stock

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-

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3

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Distributors (Availability)

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Native Components

USA . 559 parts In-Stock

1+ parts

$0.194

100+ parts

-

1k+ parts

-

10k+ parts

$0.186

559

$0.194

-

-

$0.186

Northwest PG Solutions

USA . 1,853 parts In-Stock

1+ parts

$0.213

100+ parts

-

1k+ parts

-

10k+ parts

$0.188

1,853

$0.213

-

-

$0.188

Corohmni

South Africa . 285 parts In-Stock

1+ parts

$3.137

100+ parts

-

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285

$3.137

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-

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Ampacity Inc.

Singapore . 1,491 parts In-Stock

1+ parts

$3.970

100+ parts

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1,491

$3.970

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Corphita

USA . 1,169 parts In-Stock

1+ parts

$4.203

100+ parts

-

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1,169

$4.203

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Continental Prestige Electronics

USA . 3,302 parts In-Stock

1+ parts

$6.710

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3,302

$6.710

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Allen Electronics Distributors

USA . 1 parts In-Stock

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$10.150

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1

$10.150

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AZTECH Wire

Italy . 1,054 parts In-Stock

1+ parts

$19.870

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1,054

$19.870

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QUARKTWIN TECHNOLOGY LTD

USA . 15,780 parts In-Stock

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15,780

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Microchip USA

USA . 10,533 parts In-Stock

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Problanco Electronics

Mexico . 7,817 parts In-Stock

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7,817

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A-Z Elektronik GmbH

Germany . 6,609 parts In-Stock

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6,609

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Perfect Parts

USA . 6,329 parts In-Stock

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6,329

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SupplyDigital Components

Austria . 5,530 parts In-Stock

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5,530

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Kulean Microsystems

USA . 1,131 parts In-Stock

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1,131

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TANS Electronics

Latvia . 516 parts In-Stock

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516

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Assy Fe

Spain . 80 parts In-Stock

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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23

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Overview

Unleash the power of innovation with the 2N3772G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Power BJT transistor is perfect for switching applications, offering a maximum power dissipation of 150W and a maximum collector current of 20A. With its NPN polarity and single configuration, this transistor provides seamless performance and efficiency. Whether you're looking to amplify signals or control electrical currents, the 2N3772G delivers exceptional value and versatility. Upgrade your projects today with this cutting-edge component from Onsemi.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and heat dissipation capabilities, making this transistor suitable for high power applications.

Polarity or Channel Type: NPN

The NPN polarity allows for easy integration with other NPN components in a circuit, offering flexibility and compatibility.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, ideal for use in power control circuits.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation of 150 W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature of 200°C allows for operation in demanding environments without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

The maximum collector-emitter voltage of 60 V provides a wide voltage range for various applications, offering flexibility in circuit design.

Nominal Transition Frequency (fT): 0.2 MHz

With a nominal transition frequency of 0.2 MHz, this transistor is capable of handling high frequency signals, making it suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3772G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3772G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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