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2N4921G

Onsemi

2N4921G by Onsemi

2N4921G by Onsemi is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 40V, and max. collector current of 3A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package shape.

Median Price

$0.342

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

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Rochester

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$0.342

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$0.284

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$0.253

35

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$0.253

Distributors (In-Stock)

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Digiode

USA . 1,562 parts In-Stock

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$0.267

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Vyrian

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ComSIT Distribution GmbH

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ComSIT USA

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Bristol Electronics

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Distributors (Availability)

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Corphita

USA . 62 parts In-Stock

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$0.253

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Corohmni

South Africa . 342 parts In-Stock

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$0.281

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Component Stockers USA

USA . 6,505 parts In-Stock

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$0.290

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$0.270

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$0.250

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Microchip USA

USA . 489 parts In-Stock

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$1.890

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$1.870

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$1.870

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$1.860

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AZTECH Wire

Italy . 694 parts In-Stock

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Lixinc

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SupplyDigital Components

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Problanco Electronics

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A-Z Elektronik GmbH

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Perfect Parts

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Kulean Microsystems

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Glotronic Ltd.

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Northwest PG Solutions

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Kepictronics

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TANS Electronics

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Native Components

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UHIMA Technologies

Türkiye . 345 parts In-Stock

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Overview

Unleash the power of innovation with the 2N4921G by Onsemi! Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for your switching applications. With a maximum power dissipation of 30W and a maximum collector current of 3A, this NPN transistor is designed to exceed expectations. Whether you're looking to enhance your electronic projects or streamline industrial processes, the 2N4921G delivers unmatched value and efficiency. Trust Onsemi's reputation for quality and elevate your creations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for general purpose amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easier to use in various electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance, making it suitable for use in power control circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and placement on circuit boards, improving overall design efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and reliable connections, making it easy to solder the transistor onto circuit boards securely.

Maximum Power Dissipation (Abs): 30 W

With a high maximum power dissipation rating of 30W, this transistor can handle high power levels without overheating, ensuring long-term reliability.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers a convenient and secure mounting option, ensuring stable placement on circuit boards or heat sinks.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain of 10 ensures reliable amplification and switching performance, making this transistor suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand high temperatures and harsh environments, ensuring reliable performance under various conditions.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage of 40V allows for safe operation in high voltage circuits, making this transistor versatile and reliable for different applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance, low noise, and good reliability, making it a popular choice for various electronic applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current rating of 3A, this transistor can handle high current loads, making it suitable for power control and switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish offers good solderability and corrosion resistance, ensuring strong and reliable connections for the transistor in various circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it easy to integrate this transistor into different circuit designs.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency of 3MHz allows for fast switching speeds and high-frequency performance, making this transistor ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4921G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4921G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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