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2N4904

Texas Instruments

2N4904 by Texas Instruments

2N4904 by Texas Instruments is a PNP BJT transistor with 40V VCEO, 5A IC, and 87W power dissipation. Ideal for switching applications due to its single configuration and 4MHz fT. Its metal package and flange mount style make it suitable for high-temperature environments up to 175°C.

Median Price

$4.080

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Freelance Electronics

USA . 2 parts In-Stock

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TEDSS.com

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Bristol Electronics

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American Microsemiconductor Inc.

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Vyrian

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Digiode

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Electronic Expediters

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Resion

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Standard Data Resources

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PUI

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DF Sales Co.

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ACDS - Activité Composants Distribution Service

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MISTER SPROCKETS

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Elcom Components

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ICP Electronique

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Beltway Electronics Company

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Electronics Depot

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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LittleDiode

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Fibra_Brandt Electronic GMBH

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Parana Technologies

USA . 1,005 parts In-Stock

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$1.284

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$2.043

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$1.284

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DigiPath Technology Company

USA . 2,193 parts In-Stock

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$1.414

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$1.301

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ChromeModa Solutions

Germany . 1,537 parts In-Stock

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$1.443

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$1.183

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IDEA Electronic Components Group

UK . 664 parts In-Stock

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$1.443

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$1.299

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One Stop Electronics

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$3.050

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AZTECH Wire

Italy . 791 parts In-Stock

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Native Components

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$214.660

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$206.074

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Northwest PG Solutions

USA . 191 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Corphita

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Microchip USA

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Glotronic Ltd.

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Supply Digital

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Assy Fe

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Overview

Upgrade your electronics with the 2N4904 by Texas Instruments, a top-quality Power Bipolar Junction Transistor (BJT) designed for efficient switching applications. With a maximum collector-emitter voltage of 40V and a maximum power dissipation of 87W, this PNP transistor offers unmatched performance and reliability. Whether you're working on industrial equipment or consumer electronics, the 2N4904 delivers the power you need for smooth operation. Trust Texas Instruments for cutting-edge technology that drives innovation in every industry.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal in the package body provides better thermal conductivity, allowing for efficient heat dissipation during high power operations.

Polarity or Channel Type: PNP

The PNP configuration allows for easy implementation in circuits where PNP transistors are required, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces overall complexity, making it easier to integrate into different systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle fast transitions between on and off states, making it suitable for use in power control circuits.

Terminal Form: PIN/PEG

The pin/peg terminal form ensures secure connections, preventing loose connections that can affect the performance of the transistor.

Maximum Power Dissipation (Abs): 87 W

With a high maximum power dissipation rating, this transistor can handle high power loads without overheating, ensuring reliable operation under demanding conditions.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows the transistor to withstand higher voltage levels, expanding its range of potential applications.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4904 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4904 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-175-7311, 5961001757311, 5961-00-436-0953, 5961004360953, 5961-01-058-6120, 5961010586120, 5961-99-118-4730, 5961991184730, 5961-14-347-0745, 5961143470745

NIIN

001757311, 004360953, 010586120, 991184730, 143470745

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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