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2N4918

Onsemi

2N4918 by Onsemi

The Onsemi 2N4918 is a PNP power BJT with max. collector-emitter voltage of 40V, max. collector current of 3A, and min. DC current gain of 10. It is used for switching applications due to its high power dissipation of 30W and nominal transition frequency of 3MHz in a flange mount package style.

Median Price

$1.175

Lifecycle Status

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Component Electronics Inc.

Canada . 95 parts In-Stock

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Forefront Electronics and Design

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South Africa . 237 parts In-Stock

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Northwest PG Solutions

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Benley Electronics

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DigiPath Technology Company

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Component Stockers USA

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SupplyDigital Components

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Glotronic Ltd.

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Kulean Microsystems

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Overview

Elevate your power management needs with the 2N4918 by Onsemi, a top-tier Power Bipolar Junction Transistor (BJT) that guarantees reliable performance and durability. Crafted with precision using high-quality materials, this PNP transistor is ideal for switching applications, delivering seamless functionality in various electronic systems. With a maximum power dissipation of 30W and a collector-emitter voltage of 40V, the 2N4918 offers unmatched efficiency and stability. Trust Onsemi's expertise to provide you with cutting-edge technology that enhances your projects, making the 2N4918 a valuable asset for discerning customers looking for superior performance and longevity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off control functions.

Package Shape: RECTANGULAR

Facilitates easy installation and mounting in electronic circuit boards, saving space and improving overall design efficiency.

Maximum Power Dissipation (Abs): 30 W

Capable of handling high power levels, making it suitable for applications that require strong performance and reliability.

Maximum Collector-Emitter Voltage: 40 V

Allows for operation at higher voltage levels, expanding the range of possible applications for this transistor.

Maximum Collector Current (IC): 3 A

Capable of handling high levels of current, making it suitable for applications that require strong power delivery.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds, ideal for applications that require quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4918 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4918 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-728-6941, 5961007286941, 5961-99-118-3860, 5961991183860

NIIN

007286941, 991183860

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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