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2N4921

Onsemi

2N4921 by Onsemi

The Onsemi 2N4921 is a NPN BJT transistor with max. collector current of 3A and power dissipation of 30W. Ideal for switching applications, it operates at up to 140 °C, has a min. DC current gain of 10 (hFE), and features a flange mount package style.

Median Price

$6.475

Lifecycle Status

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37

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1k+

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American Microsemiconductor Inc.

USA . 2,825 parts In-Stock

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Bristol Electronics

USA . 753,822 parts In-Stock

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Digiode

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Mil-Aero Solutions, Inc.

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ABC Electronics Ltd.

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Zilex Electronics Inc.

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Microfarads

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J & M Industries LLC

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LittleDiode

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PC Components Company LLC

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Sunrise Surplus Inc.

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ICP Electronique

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ACDS - Activité Composants Distribution Service

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Lakeview Electronics

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Manoshevitz Elec. Sales

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First Choice Components Inc.

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IDEA Electronic Components Group

UK . 1,941 parts In-Stock

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MKK Technologies

India . 213 parts In-Stock

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DigiPath Technology Company

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Corohmni

South Africa . 231 parts In-Stock

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Native Components

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Kulean Microsystems

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Corphita

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SupplyDigital Components

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TANS Electronics

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Glotronic Ltd.

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Northwest PG Solutions

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Parana Technologies

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Assy Fe

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UHIMA Technologies

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RTC Component Inc.

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Overview

Enhance your electronic projects with the 2N4921 power bipolar junction transistor by Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by industry professionals worldwide. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 40V and a maximum collector current of 3A, providing customers with exceptional performance and durability. Upgrade your designs with the 2N4921 and experience the value and benefits that Onsemi brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides good insulation and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for easy and efficient switching in electronic circuits, making it versatile for different applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and integration of the transistor into various electronic systems.

Maximum Power Dissipation: 30 W

With a high maximum power dissipation capability, this transistor can handle varying loads and operate reliably under different conditions.

Minimum DC Current Gain (hFE): 10

The minimum DC current gain of 10 ensures stable and consistent transistor performance in amplification and switching circuits.

Maximum Operating Temperature: 140 °C

The high maximum operating temperature allows the transistor to withstand elevated temperatures, increasing its reliability in harsh environments.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating of 40 V enables the transistor to handle a wide range of voltage levels in different applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, providing good performance and durability for the device.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle moderate to high current loads in various circuits.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3 MHz ensures fast and efficient switching operation, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4921 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4921 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-058-1192, 5961000581192, 5961-00-421-9609, 5961004219609, 5961-00-107-2571, 5961001072571, 5961-99-118-2686, 5961991182686, 5961-14-313-5291, 5961143135291

NIIN

000581192, 004219609, 001072571, 991182686, 143135291

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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