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2N4905

Texas Instruments

2N4905 by Texas Instruments

2N4905 by Texas Instruments is a PNP power BJT with max. collector-emitter voltage of 80V and max. operating temp. of 200°C. With a max. power dissipation of 87W, it's ideal for switching applications due to its single configuration and high collector current capability up to 5A at nominal transition frequency of 4MHz.

Median Price

$6.300

Lifecycle Status

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27

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TEDSS.com

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DF Sales Co.

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DF Sales Co.

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Bristol Electronics

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American Microsemiconductor Inc.

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First Choice Components Inc.

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MISTER SPROCKETS

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Manoshevitz Elec. Sales

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Corel Iberica Componentes, S.L.

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LWI Electronics Inc

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LittleDiode

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Advanced Electronics

New Zealand . 63 parts In-Stock

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$0.924

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$0.832

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Parana Technologies

USA . 2,197 parts In-Stock

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$2.111

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DigiPath Technology Company

USA . 349 parts In-Stock

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$1.551

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$1.427

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ChromeModa Solutions

Germany . 2,698 parts In-Stock

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$1.583

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IDEA Electronic Components Group

UK . 143 parts In-Stock

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$1.425

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Corohmni

South Africa . 311 parts In-Stock

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AZTECH Wire

Italy . 210 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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RGB Technical Solutions

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Corphita

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Overview

Looking for a reliable power switching solution? Look no further than the Texas Instruments 2N4905 Power Bipolar Junction Transistor. Manufactured by a trusted name in the industry, this PNP transistor offers high-quality performance and durability. Ideal for a variety of applications, this single configuration transistor is designed to handle up to 5A of collector current with a maximum operating temperature of 200°C. With its robust construction and efficient design, the 2N4905 provides customers with a valuable and versatile solution for their switching needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide excellent thermal conductivity and mechanical strength, resulting in better heat dissipation and durability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making them versatile for a variety of circuit designs.

Configuration: SINGLE

Single configuration transistors are simpler to use and integrate into circuit designs compared to multiple configurations.

Transistor Application: SWITCHING

Being specifically designed for switching applications, this transistor offers fast and efficient switching performance.

Package Shape: ROUND

Round packages are compact and easy to mount in various applications, providing versatility in design layouts.

Terminal Form: PIN/PEG

PIN/PEG terminals provide secure connections and ease of soldering, ensuring reliable electrical contact.

Maximum Power Dissipation (Abs): 87 W

With a high maximum power dissipation, this transistor can handle significant power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer easy installation and secure mounting, making them suitable for applications requiring stability.

Minimum DC Current Gain (hFE): 7

Having a minimum hFE value of 7 ensures consistent and reliable amplification of current in various operating conditions.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating allows this transistor to handle higher voltage applications with safety and reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them ideal for various electronic applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures this transistor can operate in cold environments without risk of failure.

Maximum Collector Current (IC): 5 A

With a high maximum collector current rating, this transistor can handle large current flows without risk of overload or damage.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection in circuit layouts, simplifying installation and maintenance.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation and helps maintain stable performance during operation.

Nominal Transition Frequency (fT): 4 MHz

A high nominal transition frequency allows this transistor to switch rapidly between on and off states, enabling fast and efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4905 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4905 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-407-0189, 5961004070189, 5961-99-118-3270, 5961991183270, 5961-99-118-9245, 5961991189245, 5961-99-654-5424, 5961996545424

NIIN

004070189, 991183270, 991189245, 996545424

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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