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2N4919G

Onsemi

2N4919G by Onsemi

The Onsemi 2N4919G is a PNP power BJT with max. collector-emitter voltage of 60V, max. collector current of 3A, and max. power dissipation of 30W. Ideal for switching applications due to its single configuration and high transition frequency of 3MHz in a rectangular package with through-hole terminals.

Median Price

$0.820

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 746 parts In-Stock

1+ parts

$0.820

100+ parts

$0.490

1k+ parts

$0.360

10k+ parts

$0.324

746

$0.820

$0.490

$0.360

$0.324

DigiKey

USA . 721 parts In-Stock

1+ parts

$1.240

100+ parts

$0.511

1k+ parts

$0.398

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-

721

$1.240

$0.511

$0.398

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Chip1Stop

Japan . 175 parts In-Stock

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$2.670

100+ parts

$0.873

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175

$2.670

$0.873

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Rochester

USA . 32,188 parts In-Stock

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$0.370

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$0.307

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$0.274

32,188

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$0.370

$0.307

$0.274

Flip Electronics (Authorized)

USA . 1,500 parts In-Stock

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Element14

Singapore . 687 parts In-Stock

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$0.497

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$0.397

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$0.322

687

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$0.397

$0.322

Distributors (In-Stock)

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Digiode

USA . 1,176 parts In-Stock

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$0.284

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$0.284

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Vyrian

USA . 2,384 parts In-Stock

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$0.299

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VNN

France . 2,026 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,570 parts In-Stock

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ComSIT USA

USA . 1,570 parts In-Stock

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Flip Electronics

USA . 1,500 parts In-Stock

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Bristol Electronics

USA . 300 parts In-Stock

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300

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Atlantic Semiconductor

USA . 300 parts In-Stock

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300

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Nova Conductors

Japan . 95 parts In-Stock

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LittleDiode

UK . 4 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,159 parts In-Stock

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$0.254

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7,159

$0.254

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Semicontronic

India . 6,859 parts In-Stock

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$0.254

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$0.248

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$0.246

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6,859

$0.254

$0.248

$0.246

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Corphita

USA . 1,494 parts In-Stock

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$0.269

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1,494

$0.269

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Corohmni

South Africa . 279 parts In-Stock

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$0.299

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279

$0.299

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Microchip USA

USA . 1,620 parts In-Stock

1+ parts

$5.330

100+ parts

$5.300

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$5.280

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$5.260

1,620

$5.330

$5.300

$5.280

$5.260

QUARKTWIN TECHNOLOGY LTD

USA . 17,743 parts In-Stock

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Perfect Parts

USA . 11,329 parts In-Stock

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SupplyDigital Components

Austria . 8,127 parts In-Stock

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Lixinc

USA . 5,919 parts In-Stock

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Argo Parts USA

USA . 5,273 parts In-Stock

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Kulean Microsystems

USA . 5,230 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,931 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 4,476 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Problanco Electronics

Mexico . 1,318 parts In-Stock

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Continental Prestige Electronics

USA . 1,091 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 340 parts In-Stock

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GreenTree Electronics

Israel . 175 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi 2N4919G Power Bipolar Junction Transistor. With a reputation for exceptional quality and reliability, Onsemi delivers cutting-edge technology in every product. The 2N4919G is perfect for switching applications, offering a maximum power dissipation of 30W and a collector-emitter voltage of 60V. Experience seamless performance and efficiency with this PNP transistor that boasts a minimum DC current gain of 10 and a maximum collector current of 3A. Elevate your projects with the Onsemi 2N4919G and discover a world of possibilities at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with existing circuit designs that require PNP transistors.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance when used in such circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in different types of electronic devices.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation rating of 30 W, this transistor can handle demanding applications without overheating.

Minimum DC Current Gain (hFE): 10

A minimum DC current gain of 10 ensures reliable amplification and signal processing in various scenarios.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to operate in a wide range of environments.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60 V ensures the transistor can handle higher voltages without breakdown.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle moderate to high current loads with ease.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good conductivity and solderability for easy integration into circuits.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3 MHz allows for fast switching speeds and high-frequency operation in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4919G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4919G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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