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2N4901

Texas Instruments

2N4901 by Texas Instruments

2N4901 by Texas Instruments is a PNP BJT transistor with 40V VCE, 5A IC, and 87W power dissipation. Ideal for switching applications due to its single configuration and 4MHz fT. The metal package with flange mount suits high-power requirements in various electronic designs.

Median Price

$6.080

Lifecycle Status

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Parana Technologies

USA . 731 parts In-Stock

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$0.995

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$1.880

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DigiPath Technology Company

USA . 848 parts In-Stock

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$1.096

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$1.008

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IDEA Electronic Components Group

UK . 2,091 parts In-Stock

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ChromeModa Solutions

Germany . 346 parts In-Stock

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AZTECH Wire

Italy . 690 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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Overview

Looking for a reliable power bipolar junction transistor for your switching applications? The 2N4901 by Texas Instruments is just what you need. Manufactured with top-notch quality and expertise, this PNP transistor offers a maximum collector-emitter voltage of 40V and a maximum collector current of 5A. With a minimum DC current gain of 7, this transistor provides efficient performance and reliability. Its round package shape and flange mount style make installation a breeze. Trust Texas Instruments to deliver the best in power transistors for all your switching needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity for efficient heat dissipation, ensuring stable performance even under high power operation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications due to their ability to turn on and off quickly, making this product suitable for high-speed switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use this transistor in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current in electronic circuits, making it ideal for applications that require frequent switching.

Maximum Power Dissipation (Abs): 87 W

With a high maximum power dissipation, this transistor can handle high power levels without overheating, ensuring reliable performance in demanding applications.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating allows this transistor to withstand higher voltage levels, increasing the versatility of applications where it can be used.

Maximum Collector Current (IC): 5 A

The high collector current rating enables this transistor to handle large current loads, making it suitable for power applications that require high current capabilities.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency indicates that this transistor can switch on and off rapidly, making it suitable for high-frequency applications where fast switching speeds are essential.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4901 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4901 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-627-0275, 5961006270275, 5961-00-473-1861, 5961004731861, 5961-00-488-7376, 5961004887376, 5961-99-118-4952, 5961991184952

NIIN

006270275, 004731861, 004887376, 991184952

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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