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2N4920

Onsemi

2N4920 by Onsemi

2N4920 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 30W, and max collector current of 3A. Ideal for switching applications, it operates at up to 175°C and has a transition frequency of 3MHz.

Median Price

$0.341

Lifecycle Status

Suppliers In-Stock

39

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 885 parts In-Stock

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Master Electronics

USA . 196 parts In-Stock

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$0.305

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$0.277

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Farnell

UK . 890 parts In-Stock

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$0.145

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Element14

Singapore . 890 parts In-Stock

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$0.361

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Verical

USA . 196 parts In-Stock

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Freelance Electronics

USA . 3 parts In-Stock

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Digiode

USA . 1,271 parts In-Stock

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Vyrian

USA . 4,518 parts In-Stock

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TEDSS.com

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Component Electronics Inc.

Canada . 95 parts In-Stock

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American Microsemiconductor Inc.

USA . 1,452 parts In-Stock

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Bristol Electronics

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Electronic Expediters

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Anansix

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Zilex Electronics Inc.

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Resion

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Pegasus Components GmbH

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ComSIT Distribution GmbH

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ComSIT USA

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Electronics Depot

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LIBRA Elektronik GmbH

Germany . 210 parts In-Stock

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Cyclops Electronics Ltd

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Prism Electronics

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Holdelec - ElecDif-Pro

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Semi Source

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Huijzer Components

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ECAB

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Elcom Components

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LittleDiode

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Corel Iberica Componentes, S.L.

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Kallista Electronics Ltd

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Corohmni

South Africa . 327 parts In-Stock

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Corphita

USA . 3,669 parts In-Stock

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$0.307

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Component Stockers USA

USA . 71 parts In-Stock

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IDEA Electronic Components Group

UK . 1,682 parts In-Stock

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$1.514

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$1.363

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MKK Technologies

India . 931 parts In-Stock

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$2.848

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DigiPath Technology Company

USA . 931 parts In-Stock

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$2.848

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Northwest PG Solutions

USA . 3,085 parts In-Stock

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$24.822

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$22.339

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Kepictronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kulean Microsystems

USA . 7,665 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,845 parts In-Stock

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Authorized Procurement Solutions

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Parana Technologies

USA . 2,210 parts In-Stock

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$1.811

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Problanco Electronics

Mexico . 2,180 parts In-Stock

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TANS Electronics

Latvia . 2,172 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Assy Fe

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SupplyDigital Components

Austria . 499 parts In-Stock

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Native Components

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RTC Component Inc.

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Perfect Parts

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UHIMA Technologies

Türkiye . 298 parts In-Stock

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ChipTracer

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Overview

Elevate your power control with the 2N4920 by Onsemi, a high-quality Power Bipolar Junction Transistor that guarantees reliable performance. Manufactured by Onsemi, a trusted name in semiconductor technology, this PNP transistor offers unparalleled efficiency and durability for various switching applications. With a maximum power dissipation of 30W and a maximum collector current of 3A, the 2N4920 delivers exceptional value and benefits to customers seeking superior power control solutions. Upgrade your systems today with the 2N4920 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and can withstand various environmental conditions, making the product reliable for long-term use.

Polarity or Channel Type: PNP

PNP transistors are generally faster than NPN transistors, making them suitable for high-speed switching applications.

Configuration: SINGLE

Simplified design and easy to use for basic switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring optimal performance in such use cases.

Maximum Power Dissipation (Abs): 30 W

Capable of dissipating high power without overheating, suitable for applications that require high power handling.

Minimum DC Current Gain (hFE): 10

Ensures proper amplification of input current for better performance in amplification applications.

Maximum Collector-Emitter Voltage: 80 V

Supports higher voltage applications without risk of breakdown, ensuring reliability in diverse circuit designs.

Maximum Collector Current (IC): 3 A

Capable of handling high current loads, making it suitable for power control and switching applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for faster switching speeds, ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4920 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4920 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-00-421-9609, 5961004219609, 5961-00-177-3577, 5961001773577, 5961-14-031-4897, 5961140314897, 5961-99-118-5121, 5961991185121

NIIN

004219609, 001773577, 140314897, 991185121

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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