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2N4914

Texas Instruments

2N4914 by Texas Instruments

2N4914 by Texas Instruments is a NPN BJT transistor with 60V VCE, 5A IC, and 88W Ptot. Ideal for switching applications due to its single configuration and 4MHz fT. Package style is flange mount with metal body material.

Median Price

$11.200

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

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DF Sales Co.

USA . 121 parts In-Stock

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$9.800

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DF Sales Co.

USA . 121 parts In-Stock

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$9.800

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Bristol Electronics

USA . 2 parts In-Stock

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$12.060

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TEDSS.com

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$25.000

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Vyrian

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Digiode

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Electronic Expediters

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Resion

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Manoshevitz Elec. Sales

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MISTER SPROCKETS

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Inland Empire Components Inc.

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ECAB

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Jameco Electronics

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Elcom Components

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Fibra_Brandt Electronic GMBH

Germany . 31 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Electro Mavin

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LittleDiode

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Pegasus Components GmbH

Germany . 8 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 4 parts In-Stock

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Microfarads

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Electronics Depot

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First Choice Components Inc.

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Distributors (Availability)

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Native Components

USA . 352 parts In-Stock

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$0.464

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$0.445

352

$0.464

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$0.445

Northwest PG Solutions

USA . 806 parts In-Stock

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$0.510

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$0.450

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$0.510

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$0.450

Parana Technologies

USA . 215 parts In-Stock

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$1.313

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$2.057

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$1.313

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DigiPath Technology Company

USA . 157 parts In-Stock

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$1.446

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$1.330

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ChromeModa Solutions

Germany . 4,106 parts In-Stock

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$1.475

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$1.210

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IDEA Electronic Components Group

UK . 848 parts In-Stock

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$1.328

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AZTECH Wire

Italy . 726 parts In-Stock

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$5.182

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Component Stockers USA

USA . 138 parts In-Stock

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$6.180

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One Stop Electronics

USA . 1,655 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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RGB Technical Solutions

Ukraine . 1,833 parts In-Stock

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Supply Digital

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Assy Fe

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Overview

Upgrade your power control with the Texas Instruments 2N4914 Power Bipolar Junction Transistor. Built with high-quality materials and precision engineering, this NPN transistor offers reliable performance in switching applications. With a maximum power dissipation of 88W and a maximum collector current of 5A, this transistor provides the power and efficiency you need. Whether you're designing industrial equipment or automotive systems, trust the 2N4914 to deliver top-notch performance every time. Step up your game with Texas Instruments.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages offer better thermal conductivity and durability, ensuring efficient heat dissipation and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration transistors are simpler to use and suitable for basic switching applications.

Transistor Application: SWITCHING

Designed specifically for switching operations, ensuring fast and reliable performance in various electronic circuits.

Package Shape: ROUND

Round packages offer uniform heat dissipation and compact design, suitable for space-constrained applications.

Terminal Form: PIN/PEG

Pin/peg terminals provide easy and secure connections, simplifying installation and maintenance processes.

Maximum Power Dissipation (Abs): 88 W

High maximum power dissipation capability allows the transistor to handle heavy loads without overheating, ensuring stable operation.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer easy and secure mounting options, suitable for industrial applications that require secure installation.

Minimum DC Current Gain (hFE): 7

Higher minimum DC current gain ensures proper amplification and switching capabilities, enabling versatile use in various circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the transistor to withstand elevated temperatures, ideal for high-power applications.

Maximum Collector-Emitter Voltage: 60 V

High maximum collector-emitter voltage rating provides added protection against voltage spikes, enhancing the transistor's reliability.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of electronic applications.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows the transistor to handle heavy currents, ensuring efficient switching operations.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy and convenient PCB mounting, streamlining the manufacturing process.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit design and ensures reliable current flow, enhancing overall performance.

Nominal Transition Frequency (fT): 4 MHz

High nominal transition frequency enables fast switching speed, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4914 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4914 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-468-2126, 5961004682126, 5961-99-654-6090, 5961996546090, 5961-99-118-9154, 5961991189154

NIIN

004682126, 996546090, 991189154

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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