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2N4922

Onsemi

2N4922 by Onsemi

The Onsemi 2N4922 is a NPN BJT transistor with max. power dissipation of 30W, max. collector-emitter voltage of 60V, and max. collector current of 3A. Ideal for switching applications due to its single configuration and high transition frequency of 3MHz. Package style: Flange mount, terminal finish: Sn/Pb, operating temp: 140°C.

Median Price

$1.750

Lifecycle Status

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DF Sales Co.

USA . 4,150 parts In-Stock

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Bristol Electronics

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Sensible Micro Corp

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IDEA Electronic Components Group

UK . 77 parts In-Stock

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Corohmni

South Africa . 460 parts In-Stock

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MKK Technologies

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DigiPath Technology Company

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Overview

Upgrade your power systems with the reliable 2N4922 by Onsemi, a top-tier manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) offers superior performance and durability for various applications such as switching circuits. With a maximum power dissipation of 30 W and a maximum collector-current of 3 A, this NPN transistor ensures efficient operation even under high temperatures. Trust Onsemi's quality and dependability to enhance your projects with the 2N4922.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, enhancing its durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and reliability.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Power Dissipation (Abs): 30 W

Capable of handling higher power levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

Supports high voltage operations, expanding the range of applications where the transistor can be used.

Maximum Collector Current (IC): 3 A

Capable of handling high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 3 MHz

Offers high frequency response, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4922 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4922 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-107-2571, 5961001072571, 5961-99-527-9583, 5961995279583, 5961-14-324-6864, 5961143246864

NIIN

001072571, 995279583, 143246864

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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