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2N4902

Texas Instruments

2N4902 by Texas Instruments

2N4902 by Texas Instruments is a PNP BJT transistor with 60V VCE, 5A IC, and 87W power dissipation. Ideal for switching applications due to its single configuration and high hFE of 7. Package style is flange mount with a round shape and bottom terminal position.

Median Price

$4.430

Lifecycle Status

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27

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1k+

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Freelance Electronics

USA . 7 parts In-Stock

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TEDSS.com

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DF Sales Co.

USA . 93 parts In-Stock

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DF Sales Co.

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American Microsemiconductor Inc.

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Forefront Electronics and Design

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Bristol Electronics

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Digiode

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Vyrian

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Fibra_Brandt Electronic GMBH

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ICP Electronique

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Holdelec - ElecDif-Pro

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MISTER SPROCKETS

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ABC Electronics Ltd.

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Zilex Electronics Inc.

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Pegasus Components GmbH

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Sinequanon

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Lakeland Logistics Inc

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ECAB

Sweden . 7 parts In-Stock

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Tech-Mark Corp

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Resion

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Halfin

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Manoshevitz Elec. Sales

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Distributors (Availability)

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Parana Technologies

USA . 747 parts In-Stock

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$1.290

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$2.046

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DigiPath Technology Company

USA . 1,898 parts In-Stock

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$1.421

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$1.307

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ChromeModa Solutions

Germany . 5,774 parts In-Stock

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IDEA Electronic Components Group

UK . 314 parts In-Stock

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AZTECH Wire

Italy . 850 parts In-Stock

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Corphita

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Glotronic Ltd.

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Supply Digital

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Northwest PG Solutions

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Cyclops Electronics Ltd (Excess)

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RTC Component Inc.

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Assy Fe

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Overview

Upgrade your power management solutions with the high-quality 2N4902 by Texas Instruments. This PNP Power Bipolar Junction Transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 60V and a maximum collector current of 5A. With a rugged metal package body and a nominal transition frequency of 4 MHz, this transistor ensures reliable performance in a compact package. Trust Texas Instruments' reputation for excellence and invest in the 2N4902 for all your power management needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides excellent heat dissipation, ensuring the transistor can operate at high power levels for extended periods of time without overheating.

Polarity or Channel Type: PNP

PNP transistors are often preferred for switching applications due to their ease of use and compatibility with certain circuit configurations.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to ensure proper connections and functioning of the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Power Dissipation (Abs): 87 W

High maximum power dissipation allows the transistor to handle high power levels, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum voltage rating of 60V, this transistor can be used in a variety of circuits without the risk of damage from high voltages.

Maximum Collector Current (IC): 5 A

The high collector current rating of 5A allows this transistor to handle substantial current flow, making it suitable for power applications.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency of 4MHz indicates that this transistor can switch between on and off states quickly, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4902 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4902 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-107-0736, 5961001070736, 5961-00-147-7694, 5961001477694, 5961-01-007-6815, 5961010076815, 5961-99-118-2087, 5961991182087

NIIN

001070736, 001477694, 010076815, 991182087

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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