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2N4998

Texas Instruments

2N4998 by Texas Instruments

2N4998 by Texas Instruments is a NPN BJT with 80V VCE, 2A IC, and 30W Ptot. Ideal for power applications due to its high voltage and current ratings. Suitable for use in circuits requiring high power dissipation and low transition frequency.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Vyrian

USA . 3,890 parts In-Stock

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PUI

USA . 3,770 parts In-Stock

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Digiode

USA . 739 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 22 parts In-Stock

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Electronics Depot

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Parana Technologies

USA . 219 parts In-Stock

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$0.815

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$1.788

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ChromeModa Solutions

Germany . 5,801 parts In-Stock

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$0.916

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$0.751

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IDEA Electronic Components Group

UK . 1,183 parts In-Stock

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$0.824

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One Stop Electronics

USA . 230 parts In-Stock

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$5.050

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AZTECH Wire

Italy . 728 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 25,165 parts In-Stock

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Microchip USA

USA . 6,718 parts In-Stock

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CPlus Electronics

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Corphita

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DigiPath Technology Company

USA . 915 parts In-Stock

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Supply Digital

USA . 743 parts In-Stock

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Native Components

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Northwest PG Solutions

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Assy Fe

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Overview

Elevate your power management solutions with the 2N4998 by Texas Instruments. Crafted with precision and expertise, this NPN Power Bipolar Junction Transistor boasts unparalleled quality and reliability. Ideal for a wide range of applications, this transistor offers customers the value of efficient power dissipation, high collector current capacity, and superior thermal performance. Experience seamless functionality and optimal performance with the 2N4998, designed to exceed expectations and deliver exceptional results in every use case. Elevate your projects with Texas Instruments' innovative technologies.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and excellent heat dissipation, making this transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 30 W

With a high power dissipation rating, this transistor can handle power-intensive tasks without overheating.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating allows for use in circuits with higher voltage requirements.

Maximum Collector Current (IC): 2 A

The high collector current rating enables this transistor to handle high current loads effectively.

Nominal Transition Frequency (fT): 50 MHz

The high transition frequency makes this transistor suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4998 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-59

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4998 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-093-2135, 5961010932135

NIIN

010932135

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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