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2N4913

Texas Instruments

2N4913 by Texas Instruments

2N4913 by Texas Instruments is a NPN BJT transistor with 40V VCEO, 5A IC, and 88W Ptot. Ideal for switching applications due to its high power dissipation and collector current capabilities. Features include a single configuration in a round package with flange mount style.

Median Price

$64.040

Lifecycle Status

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In-Stock Inventory

1k+

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Microchip Technology

USA . 121 parts In-Stock

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Bristol Electronics

USA . 13 parts In-Stock

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$9.000

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American Microsemiconductor Inc.

USA . 198 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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Component Electronics Inc.

Canada . 9 parts In-Stock

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$8.650

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$7.500

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TEDSS.com

USA . 36 parts In-Stock

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$12.000

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Digiode

USA . 4,950 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Holdelec - ElecDif-Pro

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Mil-Aero Solutions, Inc.

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ECAB

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Microfarads

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PUI

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Elcom Components

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Manoshevitz Elec. Sales

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MISTER SPROCKETS

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First Choice Components Inc.

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Parana Technologies

USA . 1,679 parts In-Stock

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$1.591

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$2.225

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$1.591

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DigiPath Technology Company

USA . 943 parts In-Stock

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$1.752

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$1.612

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$1.752

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ChromeModa Solutions

Germany . 6,809 parts In-Stock

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$1.788

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$1.466

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IDEA Electronic Components Group

UK . 949 parts In-Stock

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Ampacity Inc.

Singapore . 52 parts In-Stock

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$54.430

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Corphita

USA . 4,848 parts In-Stock

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Microchip USA

USA . 4,600 parts In-Stock

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Marpe Global Electronics

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QualityLine Systems

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Supply Digital

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Northwest PG Solutions

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XL Components Corporation

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RTC Component Inc.

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Native Components

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Overview

Elevate your power management solutions with the 2N4913 by Texas Instruments, a high-quality Power BJT transistor that offers unparalleled performance and reliability. Manufactured by a trusted industry leader, this NPN transistor is perfect for switching applications with its single configuration and round package shape. With a maximum collector current of 5A and a transition frequency of 4 MHz, this transistor ensures optimal power dissipation and efficiency. Whether you're looking to enhance your industrial equipment or streamline your electronic designs, the 2N4913 provides the value, benefits, and advantages you need to take your projects to the next level. Choose Texas Instruments for superior quality and performance every time.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body provides excellent thermal conductivity, ensuring efficient heat dissipation and allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and are known for their fast switching speeds and low saturation voltages, making this transistor ideal for high-speed switching circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate this transistor into various electronic applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it suitable for use in power supply circuits, motor control, and other high-frequency switching applications.

Maximum Power Dissipation (Abs): 88 W

With a high maximum power dissipation of 88W, this transistor can handle high power levels without getting damaged, making it suitable for demanding applications where power handling capability is crucial.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can operate reliably in high-temperature environments without performance degradation, ensuring stable operation in various conditions.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage of 40V allows the transistor to handle high voltage levels, making it suitable for applications where voltage spikes or fluctuations may occur.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current flows without getting damaged, making it suitable for applications that require high current switching capabilities.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz indicates that this transistor is capable of operating at high frequencies, making it ideal for high-speed switching applications where fast response times are critical.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4913 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4913 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-436-0955, 5961004360955, 5961-01-016-3964, 5961010163964, 5961-14-337-1293, 5961143371293

NIIN

004360955, 010163964, 143371293

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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