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2N4903

Texas Instruments

2N4903 by Texas Instruments

2N4903 by Texas Instruments is a PNP BJT transistor with max. power dissipation of 87W, max. collector-emitter voltage of 80V, and max. collector current of 5A. Ideal for switching applications due to its single configuration and silicon element material, it operates at up to 175°C temperature range.

Median Price

$47.520

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

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Microchip Technology

USA . 42 parts In-Stock

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Bristol Electronics

USA . 1 parts In-Stock

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$12.800

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$14.210

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TEDSS.com

USA . 144 parts In-Stock

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$15.000

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$12.000

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Digiode

USA . 3,537 parts In-Stock

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$45.144

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Vyrian

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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M&R Communications

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Elcom Components

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ComSIT Distribution GmbH

Germany . 32 parts In-Stock

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Halfin

Belgium . 30 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 10 parts In-Stock

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Resion

USA . 7 parts In-Stock

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DF Sales Co.

USA . 7 parts In-Stock

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DF Sales Co.

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LittleDiode

UK . 5 parts In-Stock

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Prism Electronics

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Standard Data Resources

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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ECAB

Sweden . 2 parts In-Stock

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Electronics Depot

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Native Components

USA . 739 parts In-Stock

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$0.409

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$0.393

739

$0.409

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$0.393

Northwest PG Solutions

USA . 541 parts In-Stock

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$0.450

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$0.397

541

$0.450

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$0.397

Parana Technologies

USA . 1,461 parts In-Stock

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$0.789

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$1.774

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DigiPath Technology Company

USA . 246 parts In-Stock

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$0.868

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$0.799

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ChromeModa Solutions

Germany . 3,678 parts In-Stock

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$0.886

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$0.727

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IDEA Electronic Components Group

UK . 60 parts In-Stock

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$0.886

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$0.797

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Corphita

USA . 3,942 parts In-Stock

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$42.768

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Component Stockers USA

USA . 104 parts In-Stock

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$46.520

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$43.200

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West Coast Incorporated

USA . 6,316 parts In-Stock

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Microchip USA

USA . 4,799 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

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Perfect Parts

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Kepictronics

USA . 200 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 161 parts In-Stock

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Overview

Elevate your power management solutions with the 2N4903 by Texas Instruments, a top-tier manufacturer known for excellence in quality and innovation. As part of the Power Bipolar Junction Transistors (BJT) category, this PNP transistor offers exceptional performance in switching applications. With a maximum collector-emitter voltage of 80V and maximum collector current of 5A, the 2N4903 is a reliable choice for high-power circuits. Its round package shape and metal body material ensure durability and efficient heat dissipation. Trust Texas Instruments to deliver cutting-edge technology that meets your power needs, providing value, reliability, and performance you can count on.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better thermal conductivity, allowing for efficient heat dissipation and improved reliability.

Polarity or Channel Type: PNP

PNP type transistors are commonly used for switching applications and can handle higher currents, making this transistor suitable for various power switching tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in applications requiring a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for power control circuits.

Maximum Power Dissipation (Abs): 87 W

With a high maximum power dissipation, this transistor can handle high power loads without overheating, ensuring reliable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for operation in applications with higher voltages, increasing the versatility of this transistor.

Maximum Collector Current (IC): 5 A

With a high collector current rating, this transistor can handle substantial current flows, making it suitable for power switching tasks that require high currents.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast switching speeds, enabling quick response times in switching applications for improved performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N4903 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N4903 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-139-2202, 5961001392202, 5961-00-627-0275, 5961006270275, 5961-00-408-0519, 5961004080519, 5961-14-351-6496, 5961143516496

NIIN

001392202, 006270275, 004080519, 143516496

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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