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BD676AG

Onsemi

BD676AG by Onsemi

BD676AG by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 45V max collector-emitter voltage. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

Median Price

$0.403

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2 parts In-Stock

1+ parts

$0.079

100+ parts

$0.079

1k+ parts

$0.079

10k+ parts

$0.079

2

$0.079

$0.079

$0.079

$0.079

Arrow

USA . 3 parts In-Stock

1+ parts

$0.207

100+ parts

$0.189

1k+ parts

$0.184

10k+ parts

$0.184

3

$0.207

$0.189

$0.184

$0.184

Rochester

USA . 1,500 parts In-Stock

1+ parts

$0.340

100+ parts

$0.330

1k+ parts

$0.330

10k+ parts

-

1,500

$0.340

$0.330

$0.330

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Farnell

UK . 1,740 parts In-Stock

1+ parts

$0.466

100+ parts

$0.249

1k+ parts

$0.199

10k+ parts

$0.168

1,740

$0.466

$0.249

$0.199

$0.168

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$0.763

100+ parts

$0.694

1k+ parts

$0.626

10k+ parts

-

200

$0.763

$0.694

$0.626

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Element14

Singapore . 1,320 parts In-Stock

1+ parts

$0.922

100+ parts

$0.492

1k+ parts

$0.394

10k+ parts

$0.319

1,320

$0.922

$0.492

$0.394

$0.319

Distributors (In-Stock)

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Digiode

USA . 2,455 parts In-Stock

1+ parts

$0.197

100+ parts

-

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2,455

$0.197

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Vyrian

USA . 449 parts In-Stock

1+ parts

$0.207

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449

$0.207

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Flip Electronics

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

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ComSIT Distribution GmbH

Germany . 1,535 parts In-Stock

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1,535

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ComSIT USA

USA . 1,200 parts In-Stock

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J2 Sourcing AB

Sweden . 334 parts In-Stock

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334

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Distributors (Availability)

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Component Stockers USA

USA . 1 parts In-Stock

1+ parts

$0.020

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1

$0.020

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Corphita

USA . 480 parts In-Stock

1+ parts

$0.186

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480

$0.186

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Corohmni

South Africa . 213 parts In-Stock

1+ parts

$0.653

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213

$0.653

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.763

100+ parts

$0.694

1k+ parts

$0.626

10k+ parts

-

200

$0.763

$0.694

$0.626

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Perfect Parts

USA . 42,354 parts In-Stock

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42,354

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QUARKTWIN TECHNOLOGY LTD

USA . 21,510 parts In-Stock

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TANS Electronics

Latvia . 7,068 parts In-Stock

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7,068

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Problanco Electronics

Mexico . 6,217 parts In-Stock

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Kulean Microsystems

USA . 6,148 parts In-Stock

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SupplyDigital Components

Austria . 5,672 parts In-Stock

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5,672

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

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$0.360

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2,500

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$0.360

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Native Components

USA . 960 parts In-Stock

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960

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Northwest PG Solutions

USA . 902 parts In-Stock

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UHIMA Technologies

Türkiye . 436 parts In-Stock

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436

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Overview

Unleash the power of innovation with the Onsemi BD676AG Power BJT. Crafted by a renowned manufacturer, this PNP transistor offers unparalleled quality and reliability. Ideal for amplifier applications, this versatile device is equipped with a built-in diode and resistor for added convenience. With a high DC current gain of 750 and a maximum operating temperature of 150°C, the BD676AG delivers exceptional performance while ensuring optimal power dissipation. Elevate your projects to new heights with this cutting-edge component that guarantees efficiency and precision every time. Trust in Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and longevity in various operating conditions.

Polarity or Channel Type : PNP

Suitable for applications where PNP transistors are required, offering compatibility and ease of integration in existing circuits.

Configuration : DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Convenient and space-saving design with additional built-in components for improved performance and functionality.

Transistor Application : AMPLIFIER

Specifically designed and optimized for amplifier circuits, ensuring high-quality amplification of signals with low distortion.

Package Shape : RECTANGULAR

Simplifies installation and mounting of the transistor in various electronic devices and systems.

Terminal Form : THROUGH-HOLE

Facilitates easy soldering and connection to a circuit board, promoting quick and secure assembly.

Maximum Power Dissipation (Abs) : 40 W

Capable of handling high power levels, making it suitable for applications where power dissipation is a critical factor.

Package Style (Meter) : FLANGE MOUNT

Enables stable and secure mounting of the transistor, reducing the risk of damage or failure in challenging environments.

Minimum DC Current Gain (hFE) : 750

Provides high current gain, ensuring efficient signal amplification and performance in amplifier circuits.

Maximum Operating Temperature : 150 °C

Capable of operating at high temperatures, suitable for demanding applications that require reliability under extreme conditions.

Maximum Collector-Emitter Voltage : 45 V

Supports high voltage levels, making it suitable for applications where high voltage switching or amplification is required.

Transistor Element Material : SILICON

Offers excellent thermal and electrical properties, ensuring reliable and consistent performance over the lifespan of the transistor.

Maximum Collector Current (IC) : 4 A

Capable of handling high current levels, suitable for applications where high power amplification or switching is required.

Terminal Finish : MATTE TIN

Provides a durable and corrosion-resistant finish on the terminals, ensuring reliable electrical connections and performance.

Terminal Position : SINGLE

Simplifies circuit design and connection, ensuring easy integration into a wide range of electronic systems and applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD676AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

45 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD676AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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