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2N6111G

Onsemi

2N6111G by Onsemi

2N6111G by Onsemi is a PNP BJT transistor with max. power dissipation of 40W, max. collector-emitter voltage of 30V, and max. collector current of 7A. It is used for switching applications due to its single configuration and through-hole terminal form in a rectangular package style.

Median Price

$0.527

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 54,326 parts In-Stock

1+ parts

-

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$0.527

1k+ parts

$0.437

10k+ parts

$0.390

54,326

-

$0.527

$0.437

$0.390

Flip Electronics (Authorized)

USA . 1,100 parts In-Stock

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Digiode

USA . 460 parts In-Stock

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$0.410

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460

$0.410

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DigiKey Marketplace

USA . 56,401 parts In-Stock

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Vyrian

USA . 6,144 parts In-Stock

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Microfarads

USA . 1,145 parts In-Stock

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Flip Electronics

USA . 1,100 parts In-Stock

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Bristol Electronics

USA . 600 parts In-Stock

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$0.422

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$0.315

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600

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$0.422

$0.315

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Prism Electronics

USA . 98 parts In-Stock

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98

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Inventory MP

USA . 2 parts In-Stock

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Distributors (Availability)

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Benley Electronics

USA . 74 parts In-Stock

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$0.300

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74

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Corphita

USA . 1,020 parts In-Stock

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$0.389

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$0.389

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Corohmni

South Africa . 312 parts In-Stock

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$0.432

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312

$0.432

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AZTECH Wire

Italy . 626 parts In-Stock

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$8.820

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626

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Continental Prestige Electronics

USA . 56,401 parts In-Stock

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$0.390

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Kulean Microsystems

USA . 7,683 parts In-Stock

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7,683

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SupplyDigital Components

Austria . 7,369 parts In-Stock

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Problanco Electronics

Mexico . 6,439 parts In-Stock

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Perfect Parts

USA . 4,680 parts In-Stock

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4,680

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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TANS Electronics

Latvia . 739 parts In-Stock

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UHIMA Technologies

Türkiye . 589 parts In-Stock

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Northwest PG Solutions

USA . 425 parts In-Stock

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Native Components

USA . 409 parts In-Stock

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409

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Overview

Discover the power of the 2N6111G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, a trusted leader in the industry, this PNP transistor offers reliable performance and durability. Ideal for a variety of electronic projects, this transistor provides a seamless solution for your power needs. With a maximum collector current of 7A and a minimum DC current gain of 30, the 2N6111G delivers exceptional value and efficiency to customers looking for a versatile and dependable component. Unlock endless possibilities with the 2N6111G from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it suitable for a wide range of operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile and suitable for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and installation, making it easier to integrate this transistor into different electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in electronic circuits.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation, this transistor can handle power-intensive tasks and operate reliably under heavy loads.

Maximum Collector-Emitter Voltage: 30 V

The high maximum collector-emitter voltage allows this transistor to be used in a variety of applications that require higher voltage levels.

Maximum Collector Current (IC): 7 A

With a high maximum collector current, this transistor can handle large currents effectively and ensure stable performance in demanding circuits.

Nominal Transition Frequency (fT): 10 MHz

The high nominal transition frequency indicates good high-frequency performance, making this transistor suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6111G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6111G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-004-1057, 5961010041057

NIIN

010041057

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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