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BD244BG

Onsemi

BD244BG by Onsemi

BD244BG by Onsemi is a PNP BJT transistor with 65W power dissipation, 80V collector-emitter voltage, and 6A collector current. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. The through-hole package with flange mount style suits various electronic designs.

Median Price

$0.566

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

$0.555

1k+ parts

$0.460

10k+ parts

$0.410

1,350

-

$0.555

$0.460

$0.410

Verical

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.576

10k+ parts

$0.513

1,350

-

-

$0.576

$0.513

Flip Electronics (Authorized)

USA . 9 parts In-Stock

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9

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Distributors (In-Stock)

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Digiode

USA . 442 parts In-Stock

1+ parts

$0.452

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-

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442

$0.452

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.964

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10

$0.964

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Vyrian

USA . 6,314 parts In-Stock

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6,314

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VNN

France . 2,962 parts In-Stock

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2,962

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Holdelec - ElecDif-Pro

France . 40 parts In-Stock

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40

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Flip Electronics

USA . 9 parts In-Stock

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9

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Distributors (Availability)

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Semicontronic

India . 683 parts In-Stock

1+ parts

$0.405

100+ parts

$0.395

1k+ parts

$0.393

10k+ parts

-

683

$0.405

$0.395

$0.393

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Ampacity Inc.

Singapore . 323 parts In-Stock

1+ parts

$0.405

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323

$0.405

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Corphita

USA . 1,567 parts In-Stock

1+ parts

$0.428

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1,567

$0.428

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Corohmni

South Africa . 147 parts In-Stock

1+ parts

$0.476

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147

$0.476

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Argo Parts USA

USA . 2,911 parts In-Stock

1+ parts

$0.549

100+ parts

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10k+ parts

$0.533

2,911

$0.549

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$0.533

Bastille Electronics

Australia . 550 parts In-Stock

1+ parts

$0.964

100+ parts

$0.916

1k+ parts

$0.870

10k+ parts

$0.858

550

$0.964

$0.916

$0.870

$0.858

Aztec Data Supply Inc.

USA . 161 parts In-Stock

1+ parts

$1.793

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-

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161

$1.793

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AZTECH Wire

Italy . 1,154 parts In-Stock

1+ parts

$12.670

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1,154

$12.670

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Microchip USA

USA . 5,580 parts In-Stock

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5,580

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Problanco Electronics

Mexico . 5,437 parts In-Stock

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5,437

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SupplyDigital Components

Austria . 4,858 parts In-Stock

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4,858

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Perfect Parts

USA . 3,024 parts In-Stock

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3,024

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Kulean Microsystems

USA . 2,314 parts In-Stock

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2,314

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TANS Electronics

Latvia . 786 parts In-Stock

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786

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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752

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Continental Prestige Electronics

USA . 347 parts In-Stock

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$0.430

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347

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$0.430

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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150

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Eastek

USA . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Power up your projects with the BD244BG by Onsemi! Manufactured with top-quality materials and advanced technology, this Power BJT transistor offers seamless switching capabilities for a wide range of applications. Whether you're designing circuits or working on electronic projects, this PNP transistor provides reliable performance, high power dissipation, and superior thermal management. Say goodbye to overheating and hello to efficiency with the BD244BG. Upgrade your electronics game today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in such scenarios.

Maximum Power Dissipation (Abs): 65 W

High maximum power dissipation allows for handling of moderate to high power loads without overheating.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures proper amplification of input current signal in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand elevated temperatures in harsh environments.

Maximum Collector-Emitter Voltage: 80 V

A high maximum collector-emitter voltage rating of 80V allows for handling of higher voltages in the circuit.

Maximum Collector Current (IC): 6 A

High maximum collector current rating of 6A enables the transistor to handle higher current loads in the circuit.

Nominal Transition Frequency (fT): 3 MHz

The high nominal transition frequency of 3MHz ensures fast response time and switching capabilities in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD244BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD244BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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