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BD677AG

Onsemi

BD677AG by Onsemi

BD677AG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 4A. With a min DC current gain of 750, it is ideal for amplifier applications. This power transistor comes in a rectangular package style with through-hole terminals.

Median Price

$0.432

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 1 parts In-Stock

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$0.205

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1

$0.205

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Adafruit Industries

USA . 200 parts In-Stock

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$1.113

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$1.013

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$0.913

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200

$1.113

$1.013

$0.913

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Rochester

USA . 500 parts In-Stock

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$0.432

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$0.359

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$0.320

500

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$0.432

$0.359

$0.320

Distrelec

Netherlands . 86 parts In-Stock

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Digiode

USA . 1,636 parts In-Stock

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$0.200

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$0.200

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Nova Conductors

Japan . 10 parts In-Stock

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$0.476

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$0.476

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Vyrian

USA . 3,880 parts In-Stock

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Flip Electronics

USA . 3,500 parts In-Stock

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VNN

France . 3,218 parts In-Stock

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R&J Components

USA . 1,037 parts In-Stock

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ComSIT Distribution GmbH

Germany . 410 parts In-Stock

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ComSIT USA

USA . 410 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 197 parts In-Stock

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$0.162

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$0.162

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Semicontronic

India . 197 parts In-Stock

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$0.162

100+ parts

$0.158

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$0.157

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197

$0.162

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$0.157

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Corphita

USA . 1,389 parts In-Stock

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$0.190

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1,389

$0.190

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Corohmni

South Africa . 375 parts In-Stock

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$0.232

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375

$0.232

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Component Stockers USA

USA . 477 parts In-Stock

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$0.360

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$0.340

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477

$0.360

$0.340

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Argo Parts USA

USA . 4,054 parts In-Stock

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$0.476

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$0.462

4,054

$0.476

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$0.462

Continental Prestige Electronics

USA . 3,236 parts In-Stock

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$0.476

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$0.466

3,236

$0.476

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$0.466

Aztec Data Supply Inc.

USA . 2,987 parts In-Stock

1+ parts

$0.781

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2,987

$0.781

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Advanced Electronics

New Zealand . 200 parts In-Stock

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$1.113

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$1.013

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$0.913

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200

$1.113

$1.013

$0.913

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AZTECH Wire

Italy . 452 parts In-Stock

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$12.228

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452

$12.228

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A-Z Elektronik GmbH

Germany . 6,978 parts In-Stock

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Problanco Electronics

Mexico . 6,700 parts In-Stock

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Perfect Parts

USA . 6,540 parts In-Stock

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SupplyDigital Components

Austria . 5,037 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,652 parts In-Stock

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Kulean Microsystems

USA . 4,025 parts In-Stock

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TANS Electronics

Latvia . 2,789 parts In-Stock

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UHIMA Technologies

Türkiye . 146 parts In-Stock

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Overview

Unleash the power of innovation with the BD677AG by Onsemi, a top-tier manufacturer known for quality and reliability. This Power Bipolar Junction Transistor (BJT) in NPN configuration offers unparalleled performance as an amplifier, making it ideal for a wide range of applications. With a maximum collector current of 4A and a minimum DC current gain of 750, this transistor provides exceptional value and efficiency. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BD677AG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good electrical insulation and protection, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for various amplifier applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode and resistor features make it convenient for use in amplifier circuits without additional components.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connection points and easy soldering onto circuit boards for proper functioning.

No. of Terminals: 3

Having 3 terminals simplifies the wiring process and ensures correct connections in the circuit.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides mechanical stability and ease of mounting in various electronic devices.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient amplification of input signals with minimal loss, improving overall performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring stability and reliability in harsh environments.

Maximum Collector-Emitter Voltage: 60 V

High collector-emitter voltage rating allows the transistor to handle high voltage levels effectively, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon material offers high reliability, low leakage, and excellent thermal stability, making this transistor a durable and efficient choice.

Maximum Collector Current (IC): 4 A

High collector current rating allows the transistor to handle significant current flow, making it suitable for applications requiring high current amplification.

Terminal Finish: MATTE TIN

Matte Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and durability over time.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures proper alignment in the circuit, minimizing errors and ensuring efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD677AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD677AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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