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BD678AG

Onsemi

BD678AG by Onsemi

BD678AG by Onsemi is a PNP power BJT with a max collector current of 4A and min DC current gain of 750. It features a built-in diode and resistor, making it ideal for amplifier applications. With a max operating temperature of 150°C, this transistor is suitable for high-power amplification needs.

Median Price

$1.020

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 500 parts In-Stock

1+ parts

$0.391

100+ parts

$0.368

1k+ parts

$0.333

10k+ parts

-

500

$0.391

$0.368

$0.333

-

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$1.649

100+ parts

$1.567

1k+ parts

$1.567

10k+ parts

-

2,000

$1.649

$1.567

$1.567

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 413 parts In-Stock

1+ parts

$0.372

100+ parts

-

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-

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-

413

$0.372

-

-

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TME

Poland . 327 parts In-Stock

1+ parts

$0.420

100+ parts

$0.330

1k+ parts

-

10k+ parts

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327

$0.420

$0.330

-

-

Nova Conductors

Japan . 90 parts In-Stock

1+ parts

$0.744

100+ parts

-

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-

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90

$0.744

-

-

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Vyrian

USA . 4,417 parts In-Stock

1+ parts

-

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4,417

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VNN

France . 300 parts In-Stock

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,040 parts In-Stock

1+ parts

$0.333

100+ parts

$0.325

1k+ parts

$0.323

10k+ parts

-

1,040

$0.333

$0.325

$0.323

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Ampacity Inc.

Singapore . 924 parts In-Stock

1+ parts

$0.333

100+ parts

-

1k+ parts

-

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-

924

$0.333

-

-

-

Corphita

USA . 1,722 parts In-Stock

1+ parts

$0.352

100+ parts

-

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-

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1,722

$0.352

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Corohmni

South Africa . 108 parts In-Stock

1+ parts

$0.391

100+ parts

-

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-

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108

$0.391

-

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Continental Prestige Electronics

USA . 907 parts In-Stock

1+ parts

$0.490

100+ parts

$0.261

1k+ parts

$0.208

10k+ parts

-

907

$0.490

$0.261

$0.208

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Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

$0.744

100+ parts

$0.707

1k+ parts

$0.671

10k+ parts

$0.662

120

$0.744

$0.707

$0.671

$0.662

Argo Parts USA

USA . 3,331 parts In-Stock

1+ parts

$0.744

100+ parts

-

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-

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3,331

$0.744

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Aztec Data Supply Inc.

USA . 2,170 parts In-Stock

1+ parts

$0.759

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-

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2,170

$0.759

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$1.649

100+ parts

$1.567

1k+ parts

$1.567

10k+ parts

-

2,000

$1.649

$1.567

$1.567

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AZTECH Wire

Italy . 873 parts In-Stock

1+ parts

$13.780

100+ parts

-

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873

$13.780

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Kulean Microsystems

USA . 6,037 parts In-Stock

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6,037

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SupplyDigital Components

Austria . 5,781 parts In-Stock

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5,781

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Perfect Parts

USA . 5,448 parts In-Stock

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5,448

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Problanco Electronics

Mexico . 4,401 parts In-Stock

1+ parts

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4,401

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-

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TANS Electronics

Latvia . 3,773 parts In-Stock

1+ parts

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3,773

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UHIMA Technologies

Türkiye . 598 parts In-Stock

1+ parts

-

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598

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Overview

Looking for a reliable power transistor for your amplifier application? Look no further than the Onsemi BD678AG. With a reputation for high-quality products, Onsemi has crafted this PNP transistor with a built-in diode and resistor, ensuring optimal performance and durability. Whether you're amplifying audio signals or controlling power in your circuit, the BD678AG offers a maximum collector current of 4A and a minimum DC current gain of 750, providing the perfect balance of power and efficiency. Upgrade your electronics with the Onsemi BD678AG and experience superior performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred or required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplified circuit design with built-in components for improved performance and efficiency.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such use cases.

Package Shape: RECTANGULAR

Space-saving design that allows for efficient PCB layout and integration.

Terminal Form: THROUGH-HOLE

Easy to assembly on PCBs and provides secure connections for stable operation.

Maximum Power Dissipation (Abs): 40 W

Can handle high power dissipation, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for convenient mounting and installation in various equipment.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient transistor operation and amplification.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 60 V

Safe operating voltage range for various applications, protecting the transistor from damage.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and performance.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, ideal for applications requiring high power handling.

Terminal Finish: MATTE TIN

Provides good corrosion resistance and reliable solder joints for long-term performance.

Terminal Position: SINGLE

Simplified connection design with only single terminal position, making it easier to integrate in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD678AG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BD678AG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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