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2N6490G

Onsemi

2N6490G by Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 15 A;

Median Price

$0.479

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 72 parts In-Stock

1+ parts

$0.479

100+ parts

$0.404

1k+ parts

$0.379

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72

$0.479

$0.404

$0.379

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Rochester

USA . 200 parts In-Stock

1+ parts

$0.595

100+ parts

$0.560

1k+ parts

$0.506

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200

$0.595

$0.560

$0.506

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Chip1Stop

Japan . 1,140 parts In-Stock

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Flip Electronics (Authorized)

USA . 1,050 parts In-Stock

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Verical

USA . 72 parts In-Stock

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-

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$0.404

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$0.379

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72

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$0.404

$0.379

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Distributors (In-Stock)

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Digiode

USA . 789 parts In-Stock

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$0.285

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789

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Vyrian

USA . 7,243 parts In-Stock

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Chip Stock

USA . 2,550 parts In-Stock

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Flip Electronics

USA . 1,050 parts In-Stock

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Contempo Components LLC

USA . 150 parts In-Stock

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150

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Bristol Electronics

USA . 33 parts In-Stock

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Inventory MP

USA . 18 parts In-Stock

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Sea View Technologies

USA . 15 parts In-Stock

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Corphita

USA . 579 parts In-Stock

1+ parts

$0.270

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579

$0.270

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Corohmni

South Africa . 455 parts In-Stock

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$0.300

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455

$0.300

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Component Stockers USA

USA . 1,736 parts In-Stock

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$0.390

100+ parts

$0.380

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$0.380

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1,736

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$0.380

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Native Components

USA . 262 parts In-Stock

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$1.480

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262

$1.480

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Northwest PG Solutions

USA . 1,974 parts In-Stock

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$1.628

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$1.628

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,440 parts In-Stock

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Kulean Microsystems

USA . 7,452 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,410 parts In-Stock

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SupplyDigital Components

Austria . 6,288 parts In-Stock

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TANS Electronics

Latvia . 6,199 parts In-Stock

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Microchip USA

USA . 4,835 parts In-Stock

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Problanco Electronics

Mexico . 3,619 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Perfect Parts

USA . 1,755 parts In-Stock

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Kepictronics

USA . 1,200 parts In-Stock

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UHIMA Technologies

Türkiye . 242 parts In-Stock

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Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6490G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6490G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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