Loading...

2N3055HG

Onsemi

2N3055HG by Onsemi

The Onsemi 2N3055HG is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 15A, and max. power dissipation of 115W. Ideal for switching applications due to its single configuration and high transition frequency of 2.5MHz in a round package shape suitable for flange mount installations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,027 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,027

-

-

-

-

Digiode

USA . 1,504 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,504

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 234 parts In-Stock

1+ parts

$14.680

100+ parts

-

1k+ parts

-

10k+ parts

-

234

$14.680

-

-

-

TANS Electronics

Latvia . 6,653 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,653

-

-

-

-

Problanco Electronics

Mexico . 5,129 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,129

-

-

-

-

Kulean Microsystems

USA . 2,589 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,589

-

-

-

-

SupplyDigital Components

Austria . 2,336 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,336

-

-

-

-

Northwest PG Solutions

USA . 1,137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,137

-

-

-

-

Corphita

USA . 1,090 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,090

-

-

-

-

Native Components

USA . 992 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

992

-

-

-

-

Corohmni

South Africa . 119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

119

-

-

-

-

UHIMA Technologies

Türkiye . 12 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12

-

-

-

-

Overview

Unleash the power of innovation with the Onsemi 2N3055HG Power BJT! Manufactured by the reputable Onsemi brand, this high-quality transistor offers unparalleled performance in switching applications. Its NPN polarity and single configuration make it versatile for a wide range of projects, while its 115W maximum power dissipation ensures long-lasting reliability. Say goodbye to limitations and hello to endless possibilities with the Onsemi 2N3055HG - the ultimate choice for those who demand excellence in their creations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides better heat dissipation, increasing the overall efficiency and reliability of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications, making this product suitable for various electronic switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and offers ease of use in applications that require a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in various electronic switching circuits.

Maximum Power Dissipation (Abs): 115 W

High power dissipation capability ensures the transistor can handle high power loads without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

With a high collector-emitter voltage rating, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle high current loads, making it suitable for applications that require high power switching.

Nominal Transition Frequency (fT): 2.5 MHz

High transition frequency allows for fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3055HG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3055HG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20