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MJD42C1G

Onsemi

MJD42C1G by Onsemi

MJD42C1G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 20W power dissipation. Ideal for switching applications, it has a min hFE of 15 and operates up to 150°C. Its through-hole package style makes it suitable for various electronic designs.

Median Price

$0.829

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,204 parts In-Stock

1+ parts

$0.829

100+ parts

$0.501

1k+ parts

$0.368

10k+ parts

$0.360

2,204

$0.829

$0.501

$0.368

$0.360

Element14

Singapore . 654 parts In-Stock

1+ parts

$1.003

100+ parts

$0.680

1k+ parts

$0.430

10k+ parts

-

654

$1.003

$0.680

$0.430

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Flip Electronics (Authorized)

USA . 13,800 parts In-Stock

1+ parts

-

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-

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13,800

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-

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Verical

USA . 1,550 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.460

10k+ parts

$0.410

1,550

-

-

$0.460

$0.410

Rochester

USA . 89 parts In-Stock

1+ parts

-

100+ parts

$0.423

1k+ parts

$0.351

10k+ parts

$0.313

89

-

$0.423

$0.351

$0.313

DigiKey

USA . 89 parts In-Stock

1+ parts

-

100+ parts

$3.370

1k+ parts

-

10k+ parts

-

89

-

$3.370

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,060 parts In-Stock

1+ parts

$0.346

100+ parts

-

1k+ parts

-

10k+ parts

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2,060

$0.346

-

-

-

Vyrian

USA . 12,195 parts In-Stock

1+ parts

-

100+ parts

-

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12,195

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-

-

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Flip Electronics

USA . 7,790 parts In-Stock

1+ parts

-

100+ parts

-

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7,790

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 605 parts In-Stock

1+ parts

$0.328

100+ parts

-

1k+ parts

-

10k+ parts

-

605

$0.328

-

-

-

Corohmni

South Africa . 94 parts In-Stock

1+ parts

$0.364

100+ parts

-

1k+ parts

-

10k+ parts

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94

$0.364

-

-

-

Component Stockers USA

USA . 2,416 parts In-Stock

1+ parts

$0.380

100+ parts

$0.350

1k+ parts

$0.320

10k+ parts

-

2,416

$0.380

$0.350

$0.320

-

Continental Prestige Electronics

USA . 654 parts In-Stock

1+ parts

$0.655

100+ parts

$0.396

1k+ parts

$0.291

10k+ parts

-

654

$0.655

$0.396

$0.291

-

Metaverse IC Inc.

Canada . 38,652 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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38,652

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-

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Lixinc

USA . 18,742 parts In-Stock

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18,742

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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QUARKTWIN TECHNOLOGY LTD

USA . 14,733 parts In-Stock

1+ parts

-

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14,733

-

-

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A-Z Elektronik GmbH

Germany . 6,498 parts In-Stock

1+ parts

-

100+ parts

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6,498

-

-

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Kulean Microsystems

USA . 5,592 parts In-Stock

1+ parts

-

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-

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5,592

-

-

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Microchip USA

USA . 4,784 parts In-Stock

1+ parts

-

100+ parts

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4,784

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-

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Problanco Electronics

Mexico . 4,066 parts In-Stock

1+ parts

-

100+ parts

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4,066

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-

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SupplyDigital Components

Austria . 3,206 parts In-Stock

1+ parts

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3,206

-

-

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Perfect Parts

USA . 2,346 parts In-Stock

1+ parts

-

100+ parts

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2,346

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-

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UHIMA Technologies

Türkiye . 460 parts In-Stock

1+ parts

-

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460

-

-

-

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TANS Electronics

Latvia . 111 parts In-Stock

1+ parts

-

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-

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111

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Overview

Experience the power of innovation with the MJD42C1G by Onsemi, a top-quality Power Bipolar Junction Transistor that sets the standard for performance and reliability. With a focus on precision engineering and cutting-edge technology, Onsemi delivers products that exceed expectations. Designed for a wide range of applications including switching, this PNP transistor offers customers unmatched value, efficiency, and durability. Trust Onsemi to provide you with the tools you need to succeed in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the internal components of the transistor, ensuring reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in power switching applications, making this product suitable for a wide range of switching applications.

Configuration: SINGLE

Single configuration makes this transistor easy to use and integrate into different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient control of power flow in electronic circuits.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage allows this transistor to handle higher voltage levels, making it suitable for various high-power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD42C1G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJD42C1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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